The selectivity against resist or Si is smallerin the C3F6, C4F8 and c-C4F8 plasmas than in the C4F6 andC5F8 plasmas. Fig. 5. SiO2 etch rate and selectivity at 3 mTorr, 600 W source power and 200W bias power.About Us Company Profile Company Culture Social Responsibility Business & ...
Compared to the dual frequency rf power of 13.56 MHz (400 W)/2 MHz (900 W) or 60 MHz (400 W)/2 MHz (900 W), the use of triple-frequency rf power of 60 MHz/13.56 MHz/2 MHz (900 W) showed a better anisotropic SiO2 etch profile, with the higher etch selectivity SiO2 ove...