The local mechanisms of dissociative chemisorption and reactive etching are investigated by molecular models modeling SiOH groups and SiOSi bridges at SiO 2 surfaces. The elementary reaction paths for the reactions of HF and HCl with Si O bonds of the models, Si(OH) 4 and (HO) 3 SiOSi(OH...
摘要: , giving an aspect ratio of 5, which is up to 40 times larger compare to earlier work where HF wet etching was used. This ion track lithography technique shows a potential to produce nanostructures with even higher aspect ratios.关键词:...
Wet anisotropic etching can etch silicon to the desired structure using a bulk micro-machining process. Depending on the silicon's crystallographic orientation and the type of etchant used, one can create three-dimensional shapes using this technique, which has the advantages of being inexpensive, f...
The etching of Cu oxides by HAc is presented: $${{{\mathrm{CuO}}}+{{{\mathrm{CH}}}_{3}{{{\mathrm{COOH}}}\to {{{\mathrm{Cu}}}{({{{\mathrm{CH}}}_{3}{{{\mathrm{COO}}})}_{2}+{{{\mathrm{H}}}_{2}{{{\mathrm{O}}}({{{\mathrm{g}}})$$ (3) The surface adsorp...
Cross-sectional FE-SEM images of the trench pattern (opening and depth of 200 nm and 2.5 μm, respectively) after conducting SiO2PE-ALD with (a) no inhibitor and (b) NH3*, followed by wet etching (diluted HF of 200:1 for 60 s). (c) Cross-sectional FE-SEM images after conducting ...
was formed. The surface of Si rich silicon oxide was etched by HF and then post-annealed. Both the HF surface etching and the temperature of the post-annealing were reported to be key factors associated with the color of light emission. Red emission color was obtained from the HF treatment...
According to the mechanism of HF etching SiO2 and SiNx:H,the over-plating phenomenon of multicrystalline silicon solar cells was improved by adjusting the pH value of the buffer HF solution.%自对准的光诱导化学镀/电镀技术以其栅线宽度小,工艺快捷高效等优点,成为制备选择性发射极太阳能电池的理想选择...
Zvanut, O. Richardson, HF chemical etching of SiO 2 on 4H and 6H SiC. J. Electron. Mater. 29 (3), 368–371 (2000)M. B. Johnson,M. E. Zvanut,Otha Richardson.HF chemical etching of SiO2 on 4H and 6H SiC[J]. Journal of Electronic Materials .2000(3)...
Etching the sacrificial SiO 2 in anhydrous HF (hydrofluoric acid in the gas phase) allows avoiding the subsequent complex operations of cleaning and drying, which are mandatory in the case of liquid etching. Using the HF/C 2 H 5 OH anhydrous mixture under low pressures makes it possible to ...
Briones, "HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined membranes," Sensors and Actuators A, vol. 64, no. 3, pp. 247-251, January 1998.J. Anguita, F. Briones, HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined ...