After SiO2-assisted HF etching at room temperature and disposal of reducing surface energy, etched samples displayed a maximum static water contact angle of 162.45掳 and a minimum sliding angle of 4.8掳. The mechanism of SiO2 on the etching process was explored by energy-dispersive X-ray test ...
The local mechanisms of dissociative chemisorption and reactive etching are investigated by molecular models modeling SiOH groups and SiOSi bridges at SiO 2 surfaces. The elementary reaction paths for the reactions of HF and HCl with Si O bonds of the models, Si(OH) 4 and (HO) 3 SiOSi(OH...
Here, we report the dielectric breakdown (DB) and post-breakdown mechanism of Si/SiO2, a widely used semiconductor and dielectric, in an acidic aqueous electrochemical environment. Cathodic breakdown was found to generate conduction spots on the Si/SiO2 surface. Using scanning electrochemical ...
Prior these measurements, it was performed a complete removal of the SiO2-cap by a 30 min etching in HF solution (50% HF in water). However, their SiO2 caps were present during the C implantation, with samples kept at 600°C, and for the further annealing at 1250°C for 2 h. The ...
(PR) film is subsequently deposited by spin coating. Once employing photolithography to create the required pattern on the PR, the PR photo-mask is entirely removed once the Si3N4etching barrier has been selectively etched using the buffered hydrofluoric (HF) acid etchant. The ideal V-shaped ...
To explain the resistive switching mechanism based on formation/rupture of oxygen vacancies circuit breaker (CB) modeling was conducted using Matlab program. The CB network was connected by horizontal and vertical CB resistors (90 × 30), which were composed with two voltage was applied to ...
mechanism, modifications to the architecture of solar cells and the use of nanostructures in their design may increase their efficiency. The emitted light into the cell will not be completely absorbed, and a sizeable percentage of it will be squandered, despite high-precision lithography, designed ...
The etching of Cu oxides by HAc is presented: $${{{\mathrm{CuO}}}+{{{\mathrm{CH}}}_{3}{{{\mathrm{COOH}}}\to {{{\mathrm{Cu}}}{({{{\mathrm{CH}}}_{3}{{{\mathrm{COO}}})}_{2}+{{{\mathrm{H}}}_{2}{{{\mathrm{O}}}({{{\mathrm{g}}})$$ (3) The surface adsorp...
was formed. The surface of Si rich silicon oxide was etched by HF and then post-annealed. Both the HF surface etching and the temperature of the post-annealing were reported to be key factors associated with the color of light emission. Red emission color was obtained from the HF treatment...
Briones, "HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined membranes," Sensors and Actuators A, vol. 64, no. 3, pp. 247-251, January 1998.J. Anguita, F. Briones, HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined ...