JOURNAL OF APPLIED PHYSICS. Bd. 69, Nr. 9, 1. Mai 1991, NEW YORK US Seiten 6656 - 6664 , XP000235687 K. VANHEUSDEN ET AL. ' CHEMICAL ETCH RATES IN HF SOLUTIONS AS A FUNCTION OF THICKNESS OF THERMAL SIO2 FORMED BY OXYGEN IMPLANTATION. '...
In solid-state device processing, cleaning of the substrates has always attracted a lot of interest, so also the cleaning of Si and the removal of SiO2 by HF solutions. HF is a fast etcher of SiO2 , but unfortunately also a slow etcher of Si. Since with evolving technology, the transisto...
of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at 58. Gonze, X. & Lee, C. Dynamical matrices, Born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory. Phys. Rev. B 55, 10355–10368 (1997). 59...
SiO2/SiCSiO2 etch rateoxidized silicon carbideThickness and etch rate of SiO 2 films thermally grown on hexagonal SiC substrates were compared to results obtained from SiO 2 /Si samples. The data confirm that profilometry and ellipsometry yield the same thickness values for oxides grown on Si and...
Contact angle measurement and ellipsometry are employed and the results are discussed based on SiO2 and Si surface chemistry. The cleaning of BF2-implanted wafers is not straightforward because of low etch rate of surface oxide and slow removal of surface hydroxyl groups. This problem is not ...
The results showed that through-hole etch rate had some dependence on the number and distribution of release holes, distance from the release holes, and dimension of sealed cavity, which is much different from normal vHF etching. The stiction problem in such a special case was also tested by ...
The preferred route, to pattern the HIK layer selectively towards SiO2, is a combination of both approaches [1, 2]. As such, the wet removal is not applied on a polycrystaline surface but on a damaged and/or thinned amorphous HfO2 one. Among few chemistries proposed to etch the HIK-...
A mixture of 500:1 DHF (dilute HF) with dissolved oxygen controlled near parts-per-million (ppm) levels has been found to meet these requirements for post copper CMP (chemical-mechanical polishing) cleans with exposed SiO2and Cu metal.
The etch rate using a 50:1 H_2O:HF(50%) solution at room temperature is 0.1 nm/s and is uniform throughout the thickness of the SiO_2 films. The rate is the same as that obtained for SiO_2 grown on Si.JOHNSON M.B.ZVANUT M.E....
In this work, we investigated the etching characteristics of HfAlO3 thin films and the selectivity of HfAlO3 to Si and SiO2 in a CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rates of HfAlO3 thin films was 36.7nm/min at a gas mixing ratio of CF4/Ar (= 20:80%)...