SiO2/SiCSiO2 etch rateoxidized silicon carbideThickness and etch rate of SiO 2 films thermally grown on hexagonal SiC substrates were compared to results obtained from SiO 2 /Si samples. The data confirm that profilometry and ellipsometry yield the same thickness values for oxides grown on Si and...
A SiO2 film below the photoresist, OFPR-800, was selectively etched with AHF gas. However, etch-stop was observed at the depth of 1.5 m after 15 min. I found that the flow rate of HF gas and a high-pressure process were very effective with regard to this issue. When the flow rate...
In solid-state device processing, cleaning of the substrates has always attracted a lot of interest, so also the cleaning of Si and the removal of SiO2 by HF solutions. HF is a fast etcher of SiO2 , but unfortunately also a slow etcher of Si. Since with evolving technology, the transisto...
of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at 58. Gonze, X. & Lee, C. Dynamical matrices, Born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory. Phys. Rev. B 55, 10355–10368 (1997). 59...
In this work, we investigated the etching characteristics of HfAlO3 thin films and the selectivity of HfAlO3 to Si and SiO2 in a CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rates of HfAlO3 thin films was 36.7nm/min at a gas mixing ratio of CF4/Ar (= 20:80%)...
The preferred route, to pattern the HIK layer selectively towards SiO2, is a combination of both approaches [1, 2]. As such, the wet removal is not applied on a polycrystaline surface but on a damaged and/or thinned amorphous HfO2 one. Among few chemistries proposed to etch the HIK-...
3. The etch rate of BPSG was higher than those of TEOS and Thermal Oxide in the scCO2 dry etching. - Apparent activation energy: 1.47 Kcal/mol for BPSG, 5.61 Kcal/mol for TEOS, 16.63 Kcal/mol for SiN, and 8.53 Kcal/mol for Thermal Oxide. 4. Selectivity ratios of the sacrificial ...
Contact angle measurement and ellipsometry are employed and the results are discussed based on SiO2 and Si surface chemistry. The cleaning of BF2-implanted wafers is not straightforward because of low etch rate of surface oxide and slow removal of surface hydroxyl groups. This problem is not ...
Our predicted activation barriers show that the concerted attack by HF and H[sub 2]O enhances the etch rate over etching by HF alone by reducing the barrier for each etching step. This is consistent with experimental observations that HF etching is enhanced by the presence of water. The ...
The etch rate using a 50:1 H_2O:HF(50%) solution at room temperature is 0.1 nm/s and is uniform throughout the thickness of the SiO_2 films. The rate is the same as that obtained for SiO_2 grown on Si.JOHNSON M.B.ZVANUT M.E....