SiO2/SiCSiO2 etch rateoxidized silicon carbideThickness and etch rate of SiO 2 films thermally grown on hexagonal SiC substrates were compared to results obtained from SiO 2 /Si samples. The data confirm that profilometry and ellipsometry yield the same thickness values for oxides grown on Si and...
In solid-state device processing, cleaning of the substrates has always attracted a lot of interest, so also the cleaning of Si and the removal of SiO2 by HF solutions. HF is a fast etcher of SiO2 , but unfortunately also a slow etcher of Si. Since with evolving technology, the transisto...
of the ferroelastic transition between rutile-type and CaCl2-type SiO2 at 58. Gonze, X. & Lee, C. Dynamical matrices, Born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory. Phys. Rev. B 55, 10355–10368 (1997). 59...
The results showed that through-hole etch rate had some dependence on the number and distribution of release holes, distance from the release holes, and dimension of sealed cavity, which is much different from normal vHF etching. The stiction problem in such a special case was also tested by ...
The preferred route, to pattern the HIK layer selectively towards SiO2, is a combination of both approaches [1, 2]. As such, the wet removal is not applied on a polycrystaline surface but on a damaged and/or thinned amorphous HfO2 one. Among few chemistries proposed to etch the HIK-...
The etch rate using a 50:1 H_2O:HF(50%) solution at room temperature is 0.1 nm/s and is uniform throughout the thickness of the SiO_2 films. The rate is the same as that obtained for SiO_2 grown on Si.JOHNSON M.B.ZVANUT M.E....
In this work, we investigated the etching characteristics of HfAlO3 thin films and the selectivity of HfAlO3 to Si and SiO2 in a CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rates of HfAlO3 thin films was 36.7nm/min at a gas mixing ratio of CF4/Ar (= 20:80%)...
Our predicted activation barriers show that the concerted attack by HF and H[sub 2]O enhances the etch rate over etching by HF alone by reducing the barrier for each etching step. This is consistent with experimental observations that HF etching is enhanced by the presence of water. The ...
The dissolution (or etching) of a multicomponent (Na2O-MgO-CaO-SiO2) silicate glass in aqueous HF solutions is studied. The solutions were chosen in the systems HF-HNO3-H2O, HF-HCl-H2O and HF-H2SO4-H2O, and the temperatures varied from 25 to 60掳 C. SEM micrographs of the glass ...
3. The etch rate of BPSG was higher than those of TEOS and Thermal Oxide in the scCO2 dry etching. - Apparent activation energy: 1.47 Kcal/mol for BPSG, 5.61 Kcal/mol for TEOS, 16.63 Kcal/mol for SiN, and 8.53 Kcal/mol for Thermal Oxide. 4. Selectivity ratios of the sacrificial ...