JOURNAL OF APPLIED PHYSICS. Bd. 69, Nr. 9, 1. Mai 1991, NEW YORK US Seiten 6656 - 6664 , XP000235687 K. VANHEUSDEN ET AL. ' CHEMICAL ETCH RATES IN HF SOLUTIONS AS A FUNCTION OF THICKNESS OF THERMAL SIO2 FORMED BY OXYGEN IMPLANTATION. '...
二氧化硅包碳，我用5%HF酸、室温下搅拌24小时来刻蚀二氧化硅。能够刻蚀完全么？做XRD也看不出来还有没有...
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The etch per cycle (EPC) of the ALE process saturated at 0.9 nm/cycle as the gas exposure times increased. With this self-limiting behavior, SiO2 was etched with high selectivity to poly-Si and Si3N4. The dependence of the EPC on the partial pressures of HF and NH3 was found to be ...
The preferred route, to pattern the HIK layer selectively towards SiO2, is a combination of both approaches [1, 2]. As such, the wet removal is not applied on a polycrystaline surface but on a damaged and/or thinned amorphous HfO2 one. Among few chemistries proposed to etch the HIK-...
having ozone dissolved into a liquid containing H2SO4, HF and H2O; selectively etch a CF deposit and an SiO2 deposit; forming a flash memory devicedoi:US7727871 B2This disclosure concerns a manufacturing method of a semiconductor device comprising an etching process using an etching solution ...
materials Article Mechanistic Insight into Etching Chemistry and HF-Assisted Etching of MgO-Al2O3-SiO2 Glass-Ceramic Yanxin Ji 1,2, Shun Yang 1,2, Zhulian Li 1,2, Junjie Duan 1,2, Meng Xu 1,2, Hong Jiang 1,2, Changjiu Li 1,2,3,* and Yongjun Chen 1 1 State Key Laboratory of ...