The etch per cycle (EPC) of the ALE process saturated at 0.9 nm/cycle as the gas exposure times increased. With this self-limiting behavior, SiO2 was etched with high selectivity to poly-Si and Si3N4. The depen
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having ozone dissolved into a liquid containing H2SO4, HF and H2O; selectively etch a CF deposit and an SiO2 deposit; forming a flash memory devicedoi:US7727871 B2This disclosure concerns a manufacturing method of a semiconductor device comprising an etching process using an etching solution ...
materials Article Mechanistic Insight into Etching Chemistry and HF-Assisted Etching of MgO-Al2O3-SiO2 Glass-Ceramic Yanxin Ji 1,2, Shun Yang 1,2, Zhulian Li 1,2, Junjie Duan 1,2, Meng Xu 1,2, Hong Jiang 1,2, Changjiu Li 1,2,3,* and Yongjun Chen 1 1 State Key Laboratory of ...