The etch selectivity among silicon nitride (SiN), silicon dioxide (SiO2) and poly-Si films using CH2FCHF2 plasma mixed with O2 and Ar was investigated. The effects of the CH2FCHF2 and O2 partial pressures on the composition of CHF2 and CH2F ions, which were measured with a quadrupole ...
1.Benefits of a Contact Etch Stop Layer(CESL).2.Requirements and options for its removal.2.1 Ultra diluted HF at high temperature as an alternative solution.3.Results of SiN etch in HT udHF and it's selectivity towards SiO2.4.Selectivity of HT udHF towards the contact materials.5.MR CTL...