A silicon etchant with high Si/SiO2 etching selectivity and its application are disclosed. The silicon etchant comprises at least one ketal and at least one quaternary ammonium hydroxide compound. The weight percentage of the ketal is 2099 wt. % based on the total weight of the etchant and ...
Ideally, the perfect Si etchant would be an etchant that does not cause additional damage to the wafer being processed, etch only in the pre-determined locations, has simple setup requirements, high etch rates and good uniformity over the entire wafer, high selectivity to common mask materials...
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with th... The mechanisms underlying selective etching of a SiO2 layer over a Si or Si3N4 underlayer, a process of vital importance t... Schaepkens,M.,Standaert,... - 《Journ...
With a ~1 nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) ...
etch selectivityradicalsetching zoneplasma reactor design/ B2550 Semiconductor device technology B2570 Semiconductor integrated circuitsNot Availabledoi:10.1016/0038-1101(76)90186-6Rudolf A.H. HeineckeElsevier LtdSolid State ElectronicsRudolf A. H. Heinecke.Plasma reactor design for the selective etching ...
structure. The H3PO4-H2O2and citric acid-H2O2solution compositions were chosen to maximize the etching rate of GaAs and the etching selectivity between GaAs and AlGaAs, respectively4. The Al0.7Ga0.3As etch stop layer was then removed by HCl aq. (conc.) or HF aq. (20 vol%) at room ...
φs. FIG. 6 illustrates a curve 602 that plots surface charge density as a function of surface potential for an Si/SiO2 MOSCAP where the uniform dopant density is assumed to be 1016 cm−2 at room temperature. FIG. 6 also shows curve 604 that plots phase shift that is applied to the...
A silicon etchant with high Si/SiOetching selectivity and its application are disclosed. The silicon etchant comprises at least one ketal and at least one quaternary ammonium hydroxide compound. The weight percentage of the ketal is 2099 wt. % based on the total weight of the etchant and ...
The etch process in a planar flat-bed reactor was examined with the aim of controlling the selectivity by an external dc negative bias voltage. The pressure and rf current dependences of poly Si and SiO 2 etch rates were obtained. For typical etch conditions, etch rates of about 120 nm ...
(or the like), the handle114can be selectively removed by, for example, wet chemical etching. A wet etch can be selected, for example TMAH, which has a very high degree of selectivity between silicon, oxide, copper, and barrier metal so that the silicon handle114can be removed without ...