A two-mask low cost technology for the fabrication of arrays of hollow, high aspect ratio silicon dioxide microneedles is presented. The process is based on the following technological steps: photo-electrochemical etching of silicon to etch a deep regular macropore array; wet thermal oxidation of ...
Etching of high‐aspect‐ratio Si structures for microsensors was carried out in a Cl2 plasma generated by a multipolar electron cyclotron resonance (ECR) source. Si etch rate is found to increase with microwave and rf power, and it is the highest at 1 mTorr over the range of 0.5–50 m...
Blanket panel etch characterization with temperature & time as well as other through-glass via hole characterizations will be presented. 展开 关键词: Temperature measurement Process control Glass Packaging Throughput Etching Silicon 会议名称: 2024 IEEE 74th Electronic Components and Technology ...
HIGH ASPECT RATIO ETCH 专利名称：HIGH ASPECT RATIO ETCH 发明人：THIE, William,KIM, Jisoo 申请号：US2017/055297 申请日：20171005 公开号：WO2018/075254A1 公开日：20180426 专利内容由知识产权出版社提供 专利附图：摘要：A method for etching a layer in a processing chamber is provided. A plurality ...
Very uniform and high aspect ratio anisotropy SiO2 etching process in magnetic neutral loop discharge plasma Magnetic neutral loop discharge (NLD) plasma is a new type for dry etching process characterized by effective coupling of the input electric field electron... W Chen,Y Morikawa,M Itoh,.....
High Aspect Ratio Silicon Etch - A Review:高宽比的硅蚀刻-评论 热度: High aspect ratio silicon etch A review 热度: investigation on shape, size, surface quality and elemental characterization of high-aspect-ratio blind micro holes in die sinking micro edm 热度: 相关推荐 242IEEETRANSACTIONS...
High aspect ratio beam/trench arrays are etched into silicon substrates using a Surface Technology Systems (STS) deep reactive ion etch (RIE) tool. Process input parameters are varied using high/low values for etch cycle time, passivation cycle time, RF power, and SFflow rate. The silicon etc...
专利名称：Etch process for forming high aspect ratio trenched in silicon 发明人：Yiqiong Wang,Maocheng Li,Shaoher Pan 申请号：US08/985771 申请日：19971205 公开号：US06127278A 公开日：20001003 专利内容由知识产权出版社提供 摘要：A multistep etch process for forming high aspect ratio trenches in ...
The highest etch rate was also found to be a function of the ion flux. The anisotropy of the etch was enhanced by the formation of an inert nickel fluoride/oxide skin layer on the sidewalls of the etched features. 展开 关键词: Fused silica NF₃ NF3 SF₆ SF6 SiO₂ SiO2 dry ...
Keywords:Plasma etch;Profile simulation;High aspect ratio contact;Etch profile 1.Introduction Plasma etching is extensively used in the fabrication of integrated circuits.Success of plasma etching often relies on good profile control of etched features.Profile control is a great challenge in etch process...