A two-mask low cost technology for the fabrication of arrays of hollow, high aspect ratio silicon dioxide microneedles is presented. The process is based on the following technological steps: photo-electrochemical etching of silicon to etch a deep regular macropore array; wet thermal oxidation of ...
High Aspect Ratio Silicon Etch - A Review:高宽比的硅蚀刻-评论 热度: Ways to Improve Copper Plating Distribution of High Aspect Ratio Microvias 热度: 相关推荐 242IEEETRANSACTIONSONSEMICONDUCTORMANUFACTURING(VOL14)NO3,AUGUST2001 EtchProfileControlofHigh-AspectRatioDeepSubmicrometer-SiGateEtch Hyun-Mog...
Fig.1.High aspect ratio contact structure:a)multi-,lms deposition include 270 nm of STI depth, ILD thickness contains 850 nm of BPSG and 120 nm cap TEOS,a-C hard mask,BARC and litho pattern;b) contact etching pro,le; c)Brief process,ow ...
high aspect ratio structures prior to the etch processes described herein. FIGS. 2B-2C show the profile of residual tungsten if only portions of tungsten liner etch process100are carried out. FIG. 2B shows the tungsten liner210-2profile after an etch process using only operations130-135are ...
Keywords:Plasma etch;Profile simulation;High aspect ratio contact;Etch profile 1.Introduction Plasma etching is extensively used in the fabrication of integrated circuits.Success of plasma etching often relies on good profile control of etched features.Profile control is a great challenge in etch process...
The formed high-aspect ratio β-Ga2O3 nanorods via hydrothermal synthesis followed by the calcination process were transferred into the back-gated SiO2/p+ Si substrate, and then, a conventional lift-off process was performed to fabricate the device, as shown in the inset of Figure 6. Figure ...
BICELLs consisted of 60 × 60 µm2 of rhombic lattices of SU-8 high-aspect ratio nano-pillars with a pitch of 800 nm. The nano-pillar size was around 200 nm in diameter and 420 nm in height over a 1 µm thick SiO2 layer on a silicon substrate. 2.3.2. Immobilization and ...
United States Patent US6127278 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
专利名称：Etch process for forming high aspect ratio trenched in silicon 发明人：Yiqiong Wang,Maocheng Li,Shaoher Pan 申请号：US08/985771 申请日：19971205 公开号：US06127278A 公开日：20001003 专利内容由知识产权出版社提供 摘要：A multistep etch process for forming high aspect ratio trenches in ...
high aspect ratio (HAR) nanostructures.Metal-assisted chemical etch (MacEtch) can create ultra-HAR, taper-freenanostructures in silicon, but the catalyst ... A Mallavarapu,P Ajay,C Barrera,... - 《Acs Applied Materials & Interfaces》 被引量: 0发表: 2021年 Ruthenium-Assisted Chemical Etchin...