Park W J,Kim J H,Cho S M,et al.High aspect ratio viaetching conditions for deep trench of silicon. Surface andCoating Technology . 2003Park WJ, Kim JH, Cho SM, Yoon SG, SuhS J, Yoon DH (2003) High aspect ratio via etching conditions for deep trench of silicon. Surf Coat Technol ...
This ultra-deep silicon etching process will benefit both IC integration and emerging MEMS applications at micrometer and millimeter scale that demand high-resolution deep DRIE. 展开 关键词: through silicon via (TSV deep reactive ion etching DRIE ultra-high aspect-ratio through wafer DRIE DRIE with...
Fabrication of high-aspect ratio silicon nanopillars and nanocones using deep reactive ion etching 来自 国家科技图书文献中心 喜欢 0 阅读量: 63 作者:C Fischer,JW Menezes,SA Moshkalev,C Verissimo,AR Vaz,JW Swart 摘要: Bosch type processes have been employed to fabricate nanostructured Si surfaces....
There are three main approaches: (1) subtractive patterning by etching deep trenches into a hard material, often silicon or diamond, using a masking layer on top (resist or hard mask) and HAR nanopores in anodic alumina (AAO) via a self-limiting etching process16–21, as well as polymers...
The fabrication is a three masks process, mainly using DRIE (Deep React Ion Etch) for silicon etching and AZ9260 photoresist for lithography. The fabrication begins with a thin LPCVD silicon nitride deposited on the both sides of the wafer and a 2.5 μm PECVD SiO2 on the backside of the ...
摘要: Deep trenches have been etched in crystalline silicon with polarization‐controlled, variable curvature walls. Scan speeds of up to 10 mm/s have been demonstrated. A qualitative understanding of the etching process has been developed which is based on a local, melt‐enhanced etch rate....
Etching of high‐aspect‐ratio Si structures for microsensors was carried out in a Cl2 plasma generated by a multipolar electron cyclotron resonance (ECR) source. Si etch rate is found to increase with microwave and rf power, and it is the highest at 1 mTorr over the range of 0.5–50 m...
Deep through-silicon holes with aspect ratio as high as 10:1 are etched using deep reactive ion etching (DRIE) method, and are completely filled with copper using bottom-up copper electroplating technique without forming any voids or seams. Based on this technique, a multi-layer 3D integration...
Another limitation that all techniques have is that they require direct line-of-sight to the etching surface. This means that any routing must be done on the surface of the interposer instead of within the substrate’s bulk. Many high aspect ratio via studies have used Si as their TWV ...
Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of sili...