A new three sequence etching process is provided during which a new three-gas plasma etch is to be used. This new etching sequence is preceded by a new main etch that uses three gasses and followed by a new over-etch procedure that uses the same three gasses and etching conditions as ...
Profile simulation of high aspect ratio contact etch Doosik Kim,Eric A.Hudson ⁎,David Cooperberg,Erik Edelberg,Mukund Srinivasan Lam Research Corporation,4650Cushing Parkway,Fremont,CA 94538,USA Available online 28November 2006 Abstract A semi-empirical profile simulator was employed to better ...
A method for patterning high aspect ratio vias is disclosed. More specifically a dry etching method is disclosed for patterning deep vias or vias with high aspects ratios thereby eliminating the hard mask undercut. It is the goal of the invention to create (pattern) deep vias in a substrate ...
An ultrahigh-aspect-ratio, 0.06- m-diameter, 2- m-deep contact hole pattern of SiO2 was successfully fabricated using a poly-Si mask and a magnetically enhanced reactive-ion-etching (RIE) system in a mixture of CHF3/CO gas. In this dimensional area, processing for vertical profiles is extr...
A third etch is performed into the semiconductor substrate, through the hard mask opening, to increase a height of the substrate opening. The top width of the substrate opening remains substantially unchanged during the third etch. A semiconductor structure with a high aspect ratio opening is also...
The etch profile control for the amorphous carbon layer (ACL) is an important step in the 3D NAND fabrication process. Because ACL is the mask material for defining the pattern of the high-aspect-ratio-contact (HARC) dielectric ONON layer etch process, precise control of its etch profile is...
An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the etch reactor. A first Radio Frequency (RF) source generates a first RF power with a first frequency and supplies the first RF power into the etch reactor, whereas the first ...
3D NAND HIGH ASPECT RATIO STRUCTURE ETCH 专利名称：3D NAND HIGH ASPECT RATIO STRUCTURE ETCH 发明人：Zhenjiang CUI,Hanshen ZHANG,Anchuan WANG,Zhijun CHEN,Nitin K. INGLE 申请号：US15855465 申请日：20171227 公开号：US20180182777A1 公开日：20180628 专利内容由知识产权出版社提供 专利附图：摘要：...
文档标签: High Aspect Ratio Silicon Etch - A Review 系统标签: etch silicon aspect ratio high review HighAspectRatioSiliconEtchHighAspectRatioSiliconEtch-AReviewBanqiuWu,AjayKumar,SharmaPamarthyAppliedMaterials974EArquesAve,M/S81505Sunnyvale,CA94085AbstractHighaspectratio(HAR)siliconetchwasthoroughlyreviewed...
Due to the ions’ acceleration towards the target, significantly higher vertical etch rates can be achieved, leading to the formation of high aspect ratio trenches (Figure 1a). The characteristic scallops that result from the Bosch process are unavoidable. However, given their size in the ...