The etching phase comprises flowing an etching gas comprising a halogen containing gas into the processing chamber, maintaining an etching phase pressure of at least 30 mTorr, transforming the etching gas into a plasma, and stopping the etching phase.William ThieJisoo Kim...
High Aspect Ratio Silicon Etch - A Review:高宽比的硅蚀刻-评论 热度: Ways to Improve Copper Plating Distribution of High Aspect Ratio Microvias 热度: 相关推荐 242IEEETRANSACTIONSONSEMICONDUCTORMANUFACTURING(VOL14)NO3,AUGUST2001 EtchProfileControlofHigh-AspectRatioDeepSubmicrometer-SiGateEtch Hyun-Mog...
High Aspect Ratio Silicon Etch - A Review:高宽比的硅蚀刻-评论 热度: High aspect ratio silicon etch A review 热度: Finite Element Analysis of High Contact Ratio Spur Gears in Mesh 热度: ThinSolidFilms518(2010)6076–6079 ContentslistsavailableatScienceDirect ...
An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the etch reactor. A first Radio Frequency (RF) source generates a first RF power with a first frequency and supplies the first RF power into the etch reactor, whereas the first ...
Keywords:Plasma etch;Profile simulation;High aspect ratio contact;Etch profile 1.Introduction Plasma etching is extensively used in the fabrication of integrated circuits.Success of plasma etching often relies on good profile control of etched features.Profile control is a great challenge in etch process...
(1995) High Aspect Ratio Multi-level Mold Inserts Fabricated by Mechanical Micro Machining and Deep Etch X-Ray Lithography, to be published in Micro System TechnologiesFahrenberg J, Schaller T, Bacher W, El-Kholi A, Schomburg WK (1996) High aspect ratio multi-level mold inserts fabricated by...
Etch process for forming high aspect ratio trenche 专利名称：Etch process for forming high aspect ratio trenched in silicon 发明人：Yiqiong Wang,Maocheng Li,Shaoher Pan 申请号：US08/985771 申请日：19971205 公开号：US06127278A 公开日：20001003 专利内容由知识产权出版社提供 摘要：A multistep etch...
Different methods capable of developing complex structures and building elements with high-aspect-ratio nanostructures combined with microstructures, which are of interest in nanophotonics, are presented. As originals for subsequent replication steps, tw
10.1038/micronano.2017.17 High-aspect-ratio nanoimprint VJ Cadarso et al ab Nanostructures mask PMMA Silicon cd Combined micro and nanostructures mask ef 3 Figure 2 Schematic representation of a double cryo-etch process with one single PMMA layer depicted as follows: (a) Spin coating of the poly...
Recently, new process named Trench Refill Process (TRP) makes it possible to fabricate the structure of high aspect ratio over 30 with polysilicon process [1]. Development of dry etch equipment encourages the dry etching process with single crystalline silicon [2]. Bulk silicon process by wet ...