High aspect ratio plasma etching of bulk lead zirconate titanate. 2006. USA: SPIE - The International Society for Optical Engineering.S. S. Subasinghe, A. Goyal, and S. A. Tadigadapa, "High aspect ratio plasma etching of bulk lead zirconate titanate," in MOEMS-MEMS 2006 Micro and ...
High aspect ratio (>5:1) SiC trenches or corner rounded SiC trenches are demonstrated by plasma etching.The high aspect ratio of the trenches is realized by tuning the gas ratio of the recipe.The corner rounded trenches is directly obtained by introducing nitrogen dilution during plasma etching....
We have investigated the etching of high aspect ratio holes (∼4 μm deep, ∼0.2 μm diameter) in silicon using plasmas maintained in mixtures of SF6, O2, and HBr or Cl2 gases. The etching experiments were conducted in a low pressure (25 mTorr), high density, inductively coupled plas...
Olynick, and co‐workers show that high‐aspect‐ratio sub‐15‐nm silicon nanotrenches can be directly patterned from low temperature plasma etching of a block copolymer mask. This method allows the patterning of silicon with sub‐15‐nm structures on wafer size scale, and with high thoughput...
By repeating these steps, i.e., the Si Bosch etching process, the local plasma oxidation of Si at the bottom, the isotropic etching of the semicircular gap using an SF6 plasma, and the removal of the SiOx layer, a high aspect ratio microhole with repeated semicircular gaps in the ...
The modulated plasma etching process comprises a power modulation cycle having sequential power application steps that includes: applying a radio frequency (RF) signal to the plasma processing system at a first power level, applying the RF signal to the plasma processing system at a second power ...
Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures high-aspect-ratio-structure (HARS)bulk micro-machiningdeep reactive ion etching (DRIE)suspended microstructuresIn this work, we present a single-run single-... Yao-...
The abnormal process issue, arcing, was met in recipe development of high aspect ratio (HAR) trench etching. The arcing mechanism is proposed by continuous growth of polymer upon hard-mask along pattern boundary during deep trench etching. It leads to excess charge trapped and high potential diff...
HIGH ASPECT RATIO ETCH 专利名称：HIGH ASPECT RATIO ETCH 发明人：THIE, William,KIM, Jisoo 申请号：US2017/055297 申请日：20171005 公开号：WO2018/075254A1 公开日：20180426 专利内容由知识产权出版社提供 专利附图：摘要：A method for etching a layer in a processing chamber is provided. A plurality ...
HIGH-ASPECT-RATIO METAL-POLYMER COMPOSITE STRUCTUR 专利名称：HIGH-ASPECT-RATIO METAL-POLYMER COMPOSITE STRUCTURES FOR NANO INTERCONNECTS 发明人：Ankur Aggarwal,Pulugurtha Markondeya Raj,Rao R. Tummala 申请号：US11845384 申请日：20070827 公开号：US20080136035A1 公开日：20080612 专利内容由知识产权出版社...