This scheme was investigated quantum mechanically on model molecules (like H3Si–SiH2F or H3SiF) by Trucks et al. [10]. They assumed that the attack of the HF aqueous solution to SiO2 is completed with SiF term
In addition to the process with an HF gas flow, it was demonstrated that an H-2/SF6 plasma can replace the HF gas exposure step to supply the SiO2 surfaces with HF molecules. The EPC saturated at 2.7 nm/cycle, while no measurable thickness change was observed for poly-Si and Si3N4 ...
Engineering of etched Si morphology Transferring silicon nanowires SiNWs with tailored shapes New techniques for controlled fabrication of Si structures Optical properties of SiNWs formed by MACE Nanotechnology applications of SiNWs formed by MACE Solar energy conversion Thermal energy conversion Energy stora...
HF was formed using a NF3/H2 remote plasma, and in order to remove the F radicals, which induces spontaneous etching of Si-base material, methanol was injected outside the plasma discharge region. Through this process, etch products were formed on the surface of SiO2, and then the ...
(a) HRTEM image of the scanned area by SiO2 tip. (b) HRTEM image of the post-etched area by KOH solution. When using epoxy as the passivation layer for preparing the XTEM samples, because the SiOx film (amorphous oxide layer) on silicon substrate surface showed a featureless microstructure...
the fabrication of perfect convex corners. Since the perfectly sharp convex corner is formed by the intersection of {111} planes, each step of etching defines one of the facets of convex corners. In this method, two different ways are employed to perform the etching process and therefore can ...
Finally, a SiO2 cryo-ALE process was proposed at a temperature of − 90 °C resulting in a very linear etch over 150 cycles and an Etch amount Per Cycle as low as 0.13 nm/cycle. In the area of nanotechnology and sub-10 nm devices, Atomic Layer Etching (ALE) has ...
Since the perfectly sharp convex corner is formed by the intersection of {111} planes, each step of etching defines one of the facets of convex corners. In this method, two different ways are employed to perform the etching process and therefore can be subdivided into two parts. In one ...
集成电路制造技术第五章(刻蚀)-干法dry etching
Etch in a thermal etch reaction is predicted using a machine learning model. Chemical characteristics of an etch process and associated energies in one or more reaction pathways of