The reactive ion etching of silicon oxide in CF4+H2 plasma is considered. The profiles of etched grooves are calculated as a function of mask dimensio…[ R. Knizikevičius]VacuumR. Knizikevicˇius, Real dimensional simulation of SiO2 etching in CF4 + H2 plasma, Vacuum 65(1), 101-108 ...
Low-temperature SiO2CF4 plasmaDiagnosticsModelingEtching mechanismAn investigation of etching mechanism of low-temperature SiO 2 thin films in CF 4 /Ar/O 2 inductively coupled plasmas at constant input power (900W) and bias power (200W) was carried out. It was found that that the variations of...
In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges InsituAuger electron spectroscopy has been combined withinsituetch‐rate measurements, using quartz crystal microbalances, to study the plasma etching of S... JW Coburn - 《Journal of Applied Physic...
The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4,O2, and N2 has been investigated. A comparison of the Si3N4 and SiO2 etch rates with that of polycrystalline silicon shows that the etch rates of Si3N4 and SiO2 are no...
Because of the high fluorine/carbon ratio of CF4, the CF4 gas is often used for etching SiO2. A commercial software ESI-CFD is used to simulate the process of plasma etching with an inductively coupled plasma model. For the simulation part, CFD-ACE is used to simulate the chamber, and ...
The etching products, e.g. SiFx and O2, are found to be appreciable (10%) compared to the precursor near the substrate. The predicted density trends, such as CFx+ and CFx (x=13), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO2 substrate ...
Finally, the predicted etching rate on the SiO2 substrate is presented and discussed in detail.Yuan-Ming ChiuDepartment of Mechanical EngineeringChung-Hua ChiangDepartment of Mechanical EngineeringChieh-Tsan HungDepartment of Mechanical EngineeringMeng-Hua Hu...
At sufficiently low H2 concentration, a t... DC Marra,ES Aydil - 《Journal of Vacuum Science & Technology A Vacuum Surfaces & Films》 被引量: 78发表: 1997年 Mechanism of Dry Etching of Silicon Dioxide: a Case of Direct Reactive Ion Etching Reactive sputter etching of SiO2with CHF3-O2...
The highly selective etching of SiO2 relative to Si is done by reactive ion etching with CF4/40%H2. The damage and contamination introduced in Si are characterised by Al/p-Si Schottky diodes fabricated on dry etched Si wafers. The dry etching is found to convert an Al/p-Si ohmic contact...
Therefore, this study investigated the effect of temperature on the aspect ratio etching of SiO2 in CF4/H2/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive ion etching system. The lower temperature resulted in a higher aspect ratio and etch rate of SiO2. The...