The reactive ion etching of silicon oxide in CF4+H2 plasma is considered. The profiles of etched grooves are calculated as a function of mask dimensio…[ R. Knizikevičius]VacuumR. Knizikevicˇius, Real dimensional simulation of SiO2 etching in CF4 + H2 plasma, Vacuum 65(1), 101-108 (2002).
It was found that that the variations of Ar/O2 mixing ratio (0–50 %) at constant 50 % CF4 fraction as well as the change in gas pressure (4–10 mTorr) resulted in non-monotonic SiO2 etching rates. The zero-dimensional plasma model with Langmuir probe diagnostics data provided ...
The etching products, e.g. SiFx and O2, are found to be appreciable (10%) compared to the precursor near the substrate. The predicted density trends, such as CFx+ and CFx (x=13), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO2 substrate ...
Because of the high fluorine/carbon ratio of CF4, the CF4 gas is often used for etching SiO2. A commercial software ESI-CFD is used to simulate the process of plasma etching with an inductively coupled plasma model. For the simulation part, CFD-ACE is used to simulate the chamber, and ...
The highly selective etching of SiO2 relative to Si is done by reactive ion etching with CF4/40%H2. The damage and contamination introduced in Si are characterised by Al/p-Si Schottky diodes fabricated on dry etched Si wafers. The dry etching is found to convert an Al/p-Si ohmic contact...
Finally, the predicted etching rate on the SiO2 substrate is presented and discussed in detail.Yuan-Ming ChiuDepartment of Mechanical EngineeringChung-Hua ChiangDepartment of Mechanical EngineeringChieh-Tsan HungDepartment of Mechanical EngineeringMeng-Hua Hu...
The kinetics of reactive ion etching of Si and SiO 2 in the plasma of a high-frequency (13.56 MHz) inductive discharge in a CF 4 + O 2 mixture in the range of input power of 200–600 W (0.02–0.06 W/cm 3 ) is studied. The key plasma-chemical processes that form stationary ...
This work compared C4F8 and C4H2F6 gases (as third components in CF4 + He gas mixture) for the high aspect ratio etching of SiO2 through the amorphous carbon layer (ACL) mask. The research scheme included the study of gas-phase plasma characteristics, etching kinetics, and etching profiles....
National University of SingaporeSingaporeSingaporeLap H. ChanChartered Semiconductor Manufacturing Ltd.Microelectronic Device TechnologyS.Y. Loong, H.K. Lee, L. Chan, M.S. Zhou, F.C. Loh, K.L. Tan, Characterization of polymer formation during SiO2 etching with different fluorocarbon gases (CHF3...
Using the obtained results Si/SiO 2 etching selectivity is investigated.doi:10.1016/j.vacuum.2008.01.047R. KnizikeviiusElsevier LtdVacuumR. Knizikevičius, Simulation of Si and SiO2 etching in CF4 plasma, Vacuum 82 (2008) 1191-1193.