The CF2 density and etch rate of SiO2, Si3N4 and Si are investigated as a function of gas pressure and O2 flow rate in fluorocarbon plasma. As the pressure increases, the self-bias voltage decreases whereas the SiO2 etch rate increases. Previous study has shown that SiO2 etch rate is ...
主要标的名称:SiO2/Si3N4刻蚀机 规格型号(或服务要求):SPTS 主要标的数量:1套 主要标的单价:10898748元 合同金额: 1098.000000万元 履约期限、地点等简要信息:发货时间:合同签订后360日内;交货地点:清华大学用户指定地点。 采购方式: 单一来源 七、合同签订日期: 2022-11-01 八、合同公告日期: 2022-11-03 九...
Properties of SiO2and Si3N4at 300K Dielectric layersare just as indispensable to integrated circuit fabrication as the semiconductor itself and interconnecting metallization. Dielectric layers are used primarily toisolateactive circuits from each other and to provide mechanical and chemicalprotectionto the d...
Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge;Trap Memory Applications Charge trap Flash memory device including HfO2 as charge trapping layer, Al2O3 as the blocking oxide, SiO2/Si3N4/SiO2 barrier engineered tunnel layer and T... G Congedo,A Lamperti,O Salicio,.....
The SiO2 etch rate does not depend on He content in the plasma discharge and is almost the constant. The possible role of helium appears in reactions with H2 species. Namely, He or metastable He* increases rate of H-atoms production. It is known from the previous publications that H-atoms...
165nm/min.TheetchingrateofGaNis70nm/minandtheselectivityis3.5duringtherecep— tiontest.ItfitstOthepracticalproduction.. Keywords:selectivity;inductively—coupledplasma(ICP);dryetch;GaN;biaspower EEACC:8160B — L 口 GaN因其良好的稳定性以及宽带隙(E=3.4 ...
High density selective SiO2:Si3N4 etching using a stoichiometrically altered nitride etch stop layerSelectivity of SiO to SiN is increased with the addition of silicon rich nitride conformal layer which may be used in place of or in addition to standard nitride conformal layers in manufacture. As...
Thus the Si3N4 etch rate increases with H intensity. As a result, a relative high selectivity of Si3N4 over SiO2 can be achieved with addition of suitable amount of O2 which corresponds to the maximum of H density.Lele Chen and Linda Xu and Dongxia Li and Bill LinMicroelectronic ...
The SiO 2 etch rate decreases with increase of O 2 percentage due to the decline of CF x etchant. The Si 3N 4 etch rate is found to be strong correlated to the H density in plasma gas phase. H can react with CN by forming HCN to reduce polymer thickness on Si 3N 4 surface and...
Infinite SiO2/Si3N4etch selectivity was achieved at early stages of etching due to the higher fluorocarbon consumption rate of SiO2during the removal step. The surface roughness was reduced from 0.35nm to 0.28 nm for SiO2and from 0.26nm to 0.21 nm for Si3N4before and after the etch process...