SiO2 occurs in interlayer insulating films and STI. When SiO2 films are polished, a silica-based slurry is mainly used, and KOH (potassium hydroxide) and NH4OH (ammonium hydroxide) are used as dispersants. If potassium is present in the CMP slurry, potassium contamination remains on the SiO2 ...
vacuum permittivity and charge density respectively. UNis the recombination rate of electrons, UPis the recombination rate of holes, and Jnand Jpare, respectively, the current densities of electrons and holes. Also, Gpand Gn are the total electron and hole generation rates, for which we assumed ...
PreosussltisbalnedRaenaaclytsioesnaMboevceh, tahneipsmotefnotriaSl omoetchCaonmismbusscthieomneosnfoKr -sOooMt cSo-m2/bSuisOti2oCnautnadleyrspt.r eseBnacsee/dabosnenalclethoef NO are proposed and the possible mechanisms are shown in Fig. 14. When the NO is absent in the reaction sys...
To etch the patterned SiO 2 and AlN layers, the HF and 80掳C-KOH solutions were used, respectively. Due to the use of low-temperature KOH solution, the GaN epilayer would suffer less damage during the CLO process, improving the reuse feasibility for the Eco-GaN template. Moreover, when...