Based on our previous experience in microelectronic device fabrication, we made a test process run to investigate the influence of the stress of the different multilayer films such asSiO2andSi3N4as masking material which are commonly used in MEMS fabrication processes. The stress of the films was...
对Si 及SiO2 的腐蚀速率 (内插图显示了(111) 面腐蚀场的一角 及对〈110〉方向的腐蚀) 在图3 中, (100) 和(111) 面的腐蚀速率 由测量腐蚀坑的深度直接获得。(110) 面的 腐蚀速率则由 (111) 面上矩形掩模得到的腐 蚀坑沿(110) 面横向腐蚀量的测定获得。初 始矩形掩模图形的一边平行于< 110 > 方向...
In real device fabrication, however, radical cleaning, e.g. cleaning in strong acids, is often difficult. The paper also reported that the side etching amount was 16~18 % of etching depth in case of KOH etching. The difference between TMAH and KOH may arise from slow etch rate of a nat...
Additionally, etch rate of SiO2 mask is an order of magnitude lower in TMAH than in KOH. Besides, surface morphology analysis indicates that TMAH etching can obtain much higher quality inverted pyramids of sharp vertex, smooth (111) sidewall and uncontaminated surface than KOH etching, which ...
Additionally, etch rate of SiO2 mask is an order of magnitude lower in \\{TMAH\\} than in KOH. Besides, surface morphology analysis indicates that \\{TMAH\\} etching can obtain much higher quality inverted pyramids of sharp vertex, smooth (1 1 1) sidewall and uncontaminated surface ...