建议看看赵东元刚发的一篇JACS Hydrothermal Etching Assisted Crystallization: A Facile Route to Functional...
Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor over silicon etch selectivity. The mechanisms involved in attaining high selectivity are dominated by a defluorination of the fluorocarbon steady-state fil... NR Rueger,MF Doemling,M Schaepkens,...
The impact of plasma parameters and substrate electrode temperature on the etch performance is established. We achieve the self€limiting behavior of the etch process by modulating the substrate temperature. We find that at an electrode temperature of '10°C, etching stops after complete removal of...
Inductively coupled plasma (ICP) etcher using CHF3/H2 mixture is used for effective etching of SiO2. In this paper, a commercial software CFD-ACE+ was used to simulate reactor scale and feature scale model of SiO2, diblock copolymer and Pt. Etch properties of SiO2 at different chamber ...
We have found out that N2addition to Ar/CHF3/CF4sharpens etched profile with CD loss kept small. And N2addition also increases etch rate without a heavy deterioration of selectivity of SiO2versus heavily doped n-type poly cry stall ine Si(n+poly Si). Mechanisms of changes in etching ...
the SiO 2 as an etching gas CF 4 Etching Side profiles (Side Wall Profile) is a SiO 2 to obtain a fine pattern with a vertical 1-step etching step, the etching gas and CHF 3 Etching takes place to characterized in that it comprises a possible two-step etching step etching control (...
PURPOSE:To promote an etching speed of an SiO2 film on a semiconductor substrate and to improve a rate of etching speed of a resist and a substrate layer by generating a plasma through discharging a mixed gas in which a sum of mixing ratio of a CHF3 and a C3F6 bursting into a ...
not available for EP0151948of corresponding document: US4511430 A method of controlling the etch rate ratio of SiO2/photoresist (PR) in a quartz planarization etch back process involves etching with a gaseous mixture containing CF4 and either CHF3 or CxFy with x>1 or O2. The preferred SiO2...
In this paper, the polymer composition generated by three different combinations of gas chemistries for oxide etch are studied and the effects of different O$-2$/ plasma strip duration on polymer removal are also presented. The etch chemistries used were CHF$-3$//CF$-4$/, CO/CF$-4$//...
Infinite SiO2/Si3N4etch selectivity was achieved at early stages of etching due to the higher fluorocarbon consumption rate of SiO2during the removal step. The surface roughness was reduced from 0.35nm to 0.28 nm for SiO2and from 0.26nm to 0.21 nm for Si3N4before and after the etch process...