In this report, we have demonstrated enhancement-mode n-channel GaN MOSFETs on silicon (111) substrates. We observe a high field-effect mobility of 115 cm{sup}2/Vs, the best report for GaN MOSFET fabricated on a silicon substrate to our knowledge. The threshold voltage was estimated to be...
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产品类型 RF MOSFET Transistors 工厂包装数量 25 子类别 MOSFETs Vgs - 栅极-源极电压 20 V Vgs th-栅源极阈值电压 1 V to 7 V 可售卖地 全国 类型 RF Power MOSFET 型号 D2202UK 进口品牌功率管(内匹配、外匹配)、功放芯片、功放模块等国产替代方案解决商! PDF资料 集成电路-其他集成电路...
SiC MOSFET device designers have typically chosen a planar or trench gate architecture. Planar devices offer superior gate ruggedness and short-circuit capability with simpler manufacturing processing. On the other hand, trench architectures can offer superior on-resistance RDS(on)x area and RDS(on)x...
The opinion is widely shared that gallium nitride, GaN and its “alloys” are the most important semiconductors since silicon, and that light from such sources is about to generate a profound technological revolution. The pioneering work was done by Shuji Nakamura, an inspired Japanese researcher ...
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Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC™ MOSFET portfolio comes in 400 V, 650 V, 750 V, 1200 V, 1700 V and ...
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Other suppliers are shipping new power MOSFETs. Plus, vendors are working on newer technologies. For example, Applied Novel Devices (AND) is developing power MOSFET with GaN-like performance. SkyWater is AND’s foundry partner. “With each iterative generation of silicon, we’ve reduced the cell...