#关于碳化硅的主要好处# 碳化硅(Silicon Carbide,简称SiC)是一种重要的半导体材料,广泛运用于功率电子领域。碳化硅在汽车三电上的应用主要是功率MOSFET,这些管子普遍应用在开关部件上如逆变器,开关电源等...
英飞凌单管IGBT的PLECS仿真模型,包括PLECS模型的下载、使用和校准。 49 -- 9:00 App Power Electronics MOSFET Power Losses_1080p 57 -- 14:04 App Double Pulse Testing of Si and SiC in LTSpice 9 -- 16:31 App Thermal impedance of power switching devices 54 -- 24:36 App Intuitive explanat...
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, comb...
Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products from 400 V up to 2000 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard...
Disclosed is a vertical silicon carbide power MOSFET with a 4H-SiC substrate of n+-type as drain and a 4H-Si C epilayer of n-type, epitaxially grown on the 4H-SiC substrate acting as drift region and a source region of p++-type, a well region of p-type, a channel region of p-...
So how did we drive these silicon carbide modules more efficiently? Typically, with an IGBT driver we would get around the di/dt by putting a larger gate resistor in, and if we do that we would get a design of trade off of obviously smaller di/dt with a larger resistor, but less eff...
6% electricity consumption reduction can be achieved over IGBT solutions by significantly improving the efficiency mainly in the high torque and low rotational speed range when the 4thGen. SiC MOSFET is used in the traction inverters (calculated using the WLTC fuel economy test, an international stan...
1200V SiC MOSFET Series Silicon Carbide MOSFETs from NOVOSENSE provide excellent RDSontemperature stability, high efficiency and optimal reliability. Our products cover 650V, 1200V and 1700V voltage classes. And also provide devices with a variety of RDSonvalues, from below 4mΩ to above 1Ω. Ou...
Unmatched reliability, variety & system benefits. SiC technology from Infineon! As the leading power supplier with >20 years of heritage in silicon carbide (SiC) technology development we are prepared to cater to the need for smarter, more efficient energy generation, transmission, and consumption....
These devices are used in automotive, consumer and industrial applications. In some battery-electric vehicles (BEVs), IGBTs are used for the traction inverter, which provides traction to the motor to propel a vehicle. Fig. 4: IGBT cross-section showing internal connection of MOSFET and bipolar...