Power electronics: Forty-fifth international power electronics conference 2002(PCIM 2002 Europe), May 14-16, 2002, Nurnberg, GermanyS. Cordes, L. Lorenz, "Comparison between IGBT and MOSFET technology in terms of efficiency for different fields of application", 23th International Exhibition & ...
SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter 来自 EconPapers 喜欢 0 阅读量: 50 作者:CD Fuentes,S Bernet,S Kouro 摘要: In this paper, a design driven comparison between two 190 kVA industrial three-...
This battery charger is designed based on a silicon-IGBT-based charger. The new SiC-based battery charger has the same input and output rating with the original charger, but there's an increase of switching frequency from 15 to 50 kHz. Therefore, a comparison between the two chargers from ...
MOSFET transistors evolved from planar, single-gate devices into multi-gate 3D units to increase the current drive and mitigate short-channel effects. Using 3D also reduces the area of the transistor. Occupying the third dimension allows shrinking each transistor area to get the same volume, result...
Applications for these devices include IGBT and power MOSFET gate drivers. As seen in the tables below, the performance of the two devices is virtually identical. Absolute Maximum Ratings Reverse Voltage Forward Current Peak Transient Forward Current ( Pulse Width < 1 µs) High Peak Output ...
AN-1085 IRS2153(1)D and IR2153(1)/IR2153(1)D Comparison About this document Scope and purpose The scope of this application note is to compare and highlight the differences between the IR2153(1)/IR2153(1)D and the new IRS2153(1)D high voltage, high speed power MOSFET and IGBT ...
Comparison of IGBT and MOSFET inverters in low-power BLDC motor drives[C]//Power Electronics Specialists Conference, 2006. Pesc '06. IEEE, 2017: 1-4.M. K. Kim, H. S. Bae and B. S. Suh, "Comparison of IGBT and MOSFET inverters in low-power BLDC motor drives," 2006 37th IEEE ...
In this paper, the performance of both SiC-MOSFETs and Si-IGBTs based electric vehicle (EV) traction systems under low speed and light load are investigated and compared comprehensively, particularly from efficiency point of view. Both conduction loss and switching loss of SiC-MOSFET are analyzed...
Total Harmonic Distortion of Single Phase Mid-Point Cycloconverter Comparison Between MOSFET, IGBT and GTO Power DevicesAmmar Algamluoli
intrinsic body diode has poor switching characteristics, and their use leads to higher losses. The turn-off speed of the MOSFET (its maximum dI/dt) is limited to reduce the reverse recovery of the diode. The crossover point between the 500V MOSFET and the IGBT is lower, around 3-4A.by...