Study of hafnium oxide films as a high dielectric constant material for IC applications: Their deposition and characterization.In view of the physical limit of the thickness of thin SiO;In this work, four magnetron sputtering approaches were used for the deposition of HFO;Parameters such as ...
Trends in the ultimate breakdown strength of high dielectric-constant materials. IEEE Trans. Electron Devices 50, 1771–1778 (2003). Article CAS Google Scholar Chen, I.-C., Holland, S. & Hu, C. Electrical breakdown in thin gate and tunneling oxides. IEEE Trans. Electron Devices 32, 413...
HAFNIUM-ALUMINUM OXIDE DIELECTRIC FILMSHAFNIUM-ALUMINUM OXIDE DIELECTRIC FILMSA dielectric film containing HfAlOand a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO. A gate dielectric is formed by atomi...
Enhanced Dielectric Constant of HfO{sub}2 and Al{sub}2O{sub}3 Thin-Films with Silver Nanoparticles Through an electron beam evaporation process, silver nanoparticles (Ag-nps) were introduced into dielectric thin-films. Silver incorporation into the oxide... R Ravindran,M Othman,M Yun,... - ...
It is necessary to replace the SiO{2} with a physically thicker layer of oxides of higher dielectric constant (kappa) or `high K' gate oxides such as hafnium oxide and hafnium silicate. Little was known about such oxides, and it was soon found that in many respects they have inferior ...
After careful considerations of the above extrinsic causes for frequency dispersion, high-kcapacitanceChwas determined.Ais the area of the MOS capacitance andthis the thickness of the high-koxides. Via the equation below, dielectric constant (k) was able to be extracted from the high-kcapacitance...
Hafnium oxide (HfOx) is a high dielectric constant (k) oxide which has been identified as being suitable for use as the gate dielectric in thin film transistors (TFTs). Amorphous materials are preferred for a gate dielectric, but it has been an ongoing challenge to produce amorphous HfOx ...
The formation of strong hydrogen bonds between the surface of hafnium oxide nanorods and P2VP domains drives the selective homogeneous dispersion of ceramic nanorods inside lamellar domains made via the self-assembly process, whereas the medium dielectric constant of the filler prevents local distortions ...
Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity The control of annealing temperature allowed the memory window to be achieved and to be tuned as well as the dielectric constant to be enhanced... L Khomenkova,X Portier,A Slaoui,... - 《Advanced Mater...
causes the reduction in leakage current an order of 10−14to 10−17and ION/IOFFratio increased by 54%. It has been observed that side spacer with suitable dielectric constant can be considered to improve the performance of device. Further, Subthreshold slope (SS) and DIBL and ION/IOFFcurr...