The novel composition advantageously is stable at temperatures up to 1200 degrees C. The novel composition advantageously has a dielectric value that is higher than the dielectric value of pure HfO.Cartier EduardChen JerryZhao Chao
The dielectric constant was slightly higher for amorphous HfO2 deposited from the amide precursor than for the butoxide-mmp one. Only in respect to the trap density does the butoxide precursor seem advantageous.doi:10.1080/714040772A. R. Teren...
Crystalline structures, zone-center phonon modes, and the related dielectric response of the three low-pressure phases of HfO2 have been investigated in de... X Zhao,D Vanderbilt - 《Physical Review B》 被引量: 630发表: 2002年 The effect of dopants on the dielectric constant of HfO2 and Zr...
In the case ofdielectricbreakdown, a different type of acceleration occurs. 在介质击穿的情况下, 出现了一种不同类型的加速. 辞典例句 The highdielectricconstant is characteristic of hydrogenbonded liquids. 高介电常数具有氢键液体的特征. 辞典例句 ...
The breakdown of thin dielectric films (SiO2, Si3N4, HfO2) immersed in aqueous electrolyte was investigated. The current and the kinetics of dielectric breakdown caused by large cathodic electric field applied across the dielectric layer reveal the elect
We treat permittivity as a complex function of the angular frequency of the applied field ε(ω). For the generalized refractive index and dielectric constant: ε(ω)=ε′(ω)+iε″(ω) By using complex numbers for the dielectric constant, we can specify the magnitude and phase. The ...
HfO2MOSFETConstant carrier mobilityHydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field effect transistors (MOSFETs) with different structures were fabricated on the same polycrystalline diamond plate and their performances were compared. A 28-nm-thick HfO2 layer grown at 300 °C by ...
The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO2 with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells. 展开 ...
7122464 Systems and methods of forming refractory metal nitride layers using disilazanes 2006-10-17 Vaartstra 20060189154 Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics 2006-08-24 Ahn et al. 20060151823 High dielectric constant materials 2006-07-13 Govindarajan 20060128092 Wafer bo...
High Dielectric Constant of RF-Sputtered HfO 2 Thin Films Hafnium dioxide (HfO) thin films are deposited on indium-tin-oxide (ITO)-coated glass substrates by the radio-frequency (RF) sputtering method using a HfOs... CT Hsu,KS Yan,M Yokoyama - 《Japanese Journal of Applied Physics》 被引...