Jones MN, Kwon YW, Norton DP (2005) Dielectric constant and current transport for HfO 2 thin films on ITO. Appl Phys A Mater Sci Process 81(2):285–288M. N. Jones, Y. W. Kwon, and D. P. Norton, "Dielectric constant and current transport for HfO2 thin films on ITO," Applied ...
Since the optical dielectric constant of HfO2 is determined by the electronic structure and its crystal environment, we tune the physical properties of HfO2 films on MgO by adding different dopants. In this work, we aim to determine the influence of doping together with the resulting crystal ...
Dielectric constant enhancement due to Si incorporation into HfO2. The authors investigated the dielectric constant change of Hf(1-x)SixO2 film as functions of Si concentration and annealin... Tomida,Kazuyuki,Kita,... - 《Applied Physics Letters》 被引量: 118发表: 2006年 Improvements in the ...
摘要: A formula is derived with the aid of which it is possible to compute the dielectric constant of a compact crystal from that of a crystalline powder. The formula is checked by means of experimental data. DOI: 10.1002/recl.19450640205 被引量: 44 年份: 2015 收藏...
In the case ofdielectricbreakdown, a different type of acceleration occurs. 在介质击穿的情况下, 出现了一种不同类型的加速. 辞典例句 The highdielectricconstant is characteristic of hydrogenbonded liquids. 高介电常数具有氢键液体的特征. 辞典例句 ...
Metalgateproperties(highdielectricconstantandlowleakagecurrent)andlowerinterfaceroughnessthanthePVDRu HfO2 metalgate. Ru ©2009ElsevierB.V. 1.Introductionaninterfaceroughnesswithanumericalvalueatthesub-nanoscale regimeisstillconsideredasunattainablerealm[13]. ...
The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO2 with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells. 展开 ...
Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress The dielectric breakdown property of ultrathin 2.5 and 5.0 nm hafnium oxide (HfO2) gate dielectric layers with metal nitride (TaN) gate electrodes for......
The dielectric constant was slightly higher for amorphous HfO2 deposited from the amide precursor than for the butoxide-mmp one. Only in respect to the trap density does the butoxide precursor seem advantageous.doi:10.1080/714040772A. R. Teren...
Recently, the HfO2 film has greatly attracted attentions because of its excellent physical, electronic, and chemical properties [10], [11]. Moreover, the outstanding conformal coverage, chemical stability, high dielectric constant, and wide band gap of HfO2 make it suitable for several industrial ...