Tetragonal HfO 2 (111) is predominant, and Al 2 O 3 separates from Hf–aluminate and is still in the amorphous state. The dielectric constant of amorphous HfO 2 and Hf–aluminate films was determined to be about 26 and 16.6, respectively, by measuring a Pt/dielectric film/Pt capacitor ...
Models of amorphous(HfO2)x(SiO2)... P Broqvist,A Pasquarello - 《Applied Physics Letters》 被引量: 65发表: 2007年 Optical properties of amorphous semiconductors The density of states and the dielectric constant of electrons in crystalline solids can be discussed easily by using the band ...
摘要: A formula is derived with the aid of which it is possible to compute the dielectric constant of a compact crystal from that of a crystalline powder. The formula is checked by means of experimental data. DOI: 10.1002/recl.19450640205 被引量: 44 年份: 2015 收藏...
The dielectric constant was slightly higher for amorphous HfO2 deposited from the amide precursor than for the butoxide-mmp one. Only in respect to the trap density does the butoxide precursor seem advantageous.doi:10.1080/714040772A. R. Teren...
of new screening approaches that are orders of magnitude cheaper. Worse, to go beyond the∼105known stable materials introduces another layer of computational complexity in the form of structure searching and thermodynamic stability prediction on top of estimating the band gap and dielectric constant....
Metal/HfO2/Ptstacks (where the metal is Au, Ag, Co, Ni, Cr, or In) are voltage stressed to induce a high-to-low resistive transition. No current compliance is applied during stressing (except the 100 mA limit of the voltage source). As a consequence very high conductance states are re...
Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials Low dielectric constant (low-k) materials are used Huang,Chi-Jia,Chen,... - 《Applied Surface Science A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis & Behaviour of Material...
Metalgateproperties(highdielectricconstantandlowleakagecurrent)andlowerinterfaceroughnessthanthePVDRu HfO2 metalgate. Ru ©2009ElsevierB.V. 1.Introductionaninterfaceroughnesswithanumericalvalueatthesub-nanoscale regimeisstillconsideredasunattainablerealm[13]. ...
The fabrication process of the TFTs was achieved at low temperature under 220 °C. The insulating properties of the hybrid dielectric layers such as low leakage current density under 1 nA/cm2 and the high dielectric constant of 8.4 at 1 kHz were significantly improved by filling the oxygen ...
, and investigated their microstructures, ferroelectricity, and memory characteristics in the MFIS devices. The results show that the nucleation and growth of the FE orthorhombic phase in HZO films are affected not only by the surface energy but also by the microstructure of the high-κ...