HfO2MOSFETConstant carrier mobilityHydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field effect transistors (MOSFETs) with different structures were fabricated on the same polycrystalline diamond plate and their performances were compared. A 28-nm-thick HfO2 layer grown at 300 °C by ...
These crucial issues were addressed by introducing HfO2 as high-k material [2], [3], [4], [5], [6], [7], [8], [9] which has emerged as a front runner owing to its large bandgap (5.6–5.8 eV), high dielectric constant (∼20), good thermodynamic stability and sufficient band...
1 ALD-AtomicLayerDeposition（原子层沉积）随着微电子行业的发展,集成度不断提高、器件尺寸持续减小,使得许多传统微电子材料和科技面临巨大挑战,然而原子层沉积(ALD)技术作为一种优异的镀膜技术,因其沉淀的薄膜纯度高、均匀性及保行性好,还能十分精确地控制薄膜的厚度与成分,仍然备受关注并被广泛应用于半导体、光学、光...
ALD-AtomicLayerDeposition（原子层沉积）随着微电子行业的发展,集成度不断提高、器件尺寸持续减小,使得许多传统微电子材料和科技面临巨大挑战,然而原子层沉积(ALD)技术作为一种优异的镀膜技术,因其沉淀的薄膜纯度高、均匀性及保行性好,还能十分精确地控制薄膜的厚度与成分,仍然备受关注并被广泛应用于半导体、光学、光...
ALD制备的新型超薄TiO2/Si3N4叠栅介质薄膜具有优良的表面界面特性和良好的漏电流特性,有能力成为下一代新型栅介质材料41高K介质材料集成器件的小型化给当前材料的持续使用带来CandidateHighκκMaterialsMaterialDielectricconstant(κκ)Si3N4/SiO25-6Sc2O3>10Al2O38-9Y2O315HfO221ZrO222LaAlO325Ta2O525La2O325...
It is also extracted a constant carrier mobility of 37.1 cm/Vs in the gated channel in a large VGS range of 2 V ≤ VGS ≤ 8 V, which indicates the good interface characteristics between H-diamond and HfO2 and contributes to the high device performances. These results indicate that high ...
dielectricpermittivity(~27)butalargeconductionbandoffset(~2.3eV)withsilicon.(1, 2)Itsintrinsicpropertiescomparedwithotherhigh-kdielectricssuchasHfO2andZrO2 canbedegradedbecauselanthanumoxide(LaO)easilyformsbothaLa-hydroxideand 23 aLa-silicatebecauseofthehygroscopicandcatalyticbehaviorofLa.(3-5)La-hydroxide could...
ALD 制备的新型超薄TiO2/Si3N4 叠栅介质薄膜具有优良的表面界面特性和良好的漏电流特性,有能力成为下一代新型栅介质材料17Candidate High MaterialsMaterialDielectric constant()Si3N4/SiO25-6Sc2O310Al2O38-9Y2O315HfO221ZrO222LaAlO325Ta2O525La2O325-30SrTiO3200BaxSr1-xO330018IC互连技 8、术铜互连 ...
Therefore, the electric field across is worth noting that the dielectric constant of bulk ZnO is around 10.8 while ZnO with quantum confinement effects in 3D (ZnO quantum dots) has a reported dielectric constant of around 3.767. Thus, the dielectric constant of the 2D ZnO islands is expected ...
If the annealing temperature for HfO 2 films was restricted below 500 °C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 °C degrades the electrical ...