The current gain and breakdown voltage of InGaAs/InP heterostructure bipolar transistors (HBTs) have subsequently been used to evaluate the impact and efficiency of the e-beam evaporated HfO2 passivation layers. The results from these structures have been contrasted with data from similar samples ...
Hafnium oxide (HfO2) is a ferroelectric in nature and a colorless solid. It's band gap is between 5.3 and 5.7 eV. Hafnium oxides are used as a gate insulator in field effect transistor in place of silicon di oxide by Intel group (Intel, 2007). Dielectric constant of Hafnium oxide is ...
A DFT and TCAD-based study has shown the reliability aspects of ferroelectric transistors due to different HfO2-dopants, which is necessary for ferroelectric material optimization for low-voltage logic and memory applications. 展开 关键词: Hafnium oxide FeFETs Semiconductor process modeling Atoms Silicon...
The breakdown characteristics of the crystalline and amorphous hafnium (Hf) silicates have been studied using metal-insulator-metal capacitors. It is found that, although the distribution of time-dependent dielectric breakdown and charge to breakdown(QBD)are affected by crystallization, the breakdown is...
Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-steep logical switching and low power non-volatile memory functions, have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale. In this review, ...
Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative meth...
Its ferroelectric layer directly replaces the gate oxide layer of the transistor. Therefore, the device size of Hf-based FeFET is often smaller, and the design architecture can largely refer to the current mainstream CMOS transistor. Due to its advantages of non-volatility, compatibility, and non...
By replacing the SiO2 layer with the ZrHfO film, promising memory functions, e.g., low programming voltage and long charge retention time, can be expected. In this study, the ZrHfO high-k MOS capacitors that separately contain nanocrystalline ruthenium oxide (nc-RuO), indium tin oxide (nc-...
Breakdown voltageArea-specific ON-resistanceGate chargeA novel, vertical single-diffused metal–oxide–semiconductor (VSDMOS) structure is proposed by applying workfunction engineering to a vertical power metal–oxide–semiconductor field-effect transistor (MOSFET) with source and drain regions formed using...
The insulating property in terms of the dielectric breakdown voltage is 100 V or more as determined in a film thickness of 1 渭m or less and an area of 20 mm 2 .Shinji TokumaruMisao HashimotoTomomi Murata