Due to its intrinsic negative charge, label-free detection of DNA can be achieved in the gate region of high-sensitivity FET devices. Previous work has shown that phosphates and phosphonates coordinate specifically onto metal oxide substrates including aluminum and titanium oxides. This property can ...
Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-steep logical switching and low power non-volatile memory functions, have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale. In this review, ...
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing Markus Hellenbrand Judith MacManus-Driscoll Nano Convergence(2023) Associated content Focus New directions in ferroelectrics Nature Materials (Nat. Mater.)ISSN1476-4660(online)ISSN1476-1122(print) ...
A room-temperature ultrasonic hydrogen sensor based on a sensitive layer of reduced graphene oxide Article Open access 28 January 2021 Introduction Monitoring the partial pressure of hydrogen in a cheap and reliable way is essential for its implementation as an energy vector. Optical sensors have a...
It works because the gallium prevents the aluminum from creating it’s protective oxide layer. It was discoverd by accident when Purdue researchers were rinsing materials from a semi-conductor project and the residue started to bubble in the water. Gallium is expensive but with the proper motivati...
Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-steep logical switching and low power non-volatile memory functions, have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale. In this review, ...
Hafnium Oxide StacksCharge in HfO_2 gate stacks grown from various MOCVD sources has been studied. For these films, charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO_2/interfacial layer (IL) interface and positive at the Si/IL ...
P,Fortunato, E,Martins, R.Low temperature processed hafnium oxide: Structural and electrical properties. Journal of Materials Science . 2006L. Pereira, P. Barquinha, E. Fortunato, and R. Martins, "Low temperature processed hafnium oxide: structural and electri- cal properties," Materials Science ...
The charge in the stack is mainly concentrated at the interfaces and is negative at the HfO2/interfacial layer (IL) interface and positive at the Si/IL interface. In general, the calculated charge densities at both interfaces are of order 1012 cm-2. A forming gas anneal can reduce interface...
Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics Rights and permissions Reprints and permissions About this article Cite this article Yuan, P., Mao, GQ., Cheng, Y. et al. Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Res. 15, 3667–3674 (2022...