Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devicescovers all aspects relating to the structural and electrical properties of HfO2and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectr...
We suggest a facile way to prepare precursor solutions with metal salts and alcohol and fabricate ultrathin ferroelectric yttrium-doped hafnium oxide films on Pt(111)/TiO 2 /SiO 2 /Si substrates by chemical solution deposition and post-annealing treatment. The samples were prepared with 5.2mol% ...
et al. Complex internal bias fields in ferroelectric hafnium oxide. ACS Appl. Mater. Interfaces 7, 20224–20233 (2015). CAS Google Scholar Hoffmann, M. et al. Stabilizing the ferroelectric phase in doped hafnium oxide. J. Appl. Phys. 118, 072006 (2015). Google Scholar Zhou, D. Y. ...
Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO2), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results ...
We report that crystalline phases with ferroelectric behavior can be formed in thin films of SiO2doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO2crystallize in a monoclinic/tetragonal phase mixture. We observed that the formation of the monoclinic phase...
et al. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Adv. Mater. 2015, 27, 1811–1831. Article CAS Google Scholar Böscke, T. S.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U. Ferroelectricity in hafnium oxide thin films. Appl. Phys. Lett...
T. Schenk, S. Mueller, U. Schroeder, R. Materlik, A. Kersch, M. Popovici, C. Adelmann, S. Van Elshocht, T. Mikolajick: Strontium doped hafnium oxide thin films: wide process window for ferroelectric memories, in 2013 Proceedings of the European Solid-State Device Research Conference (...
properties of ferroelectric hafnium oxide and its integration into future devices. He is primarily involved in process integration, device characterization, and reliability improvement. Previously, he worked at the Infineon/Qimonda DRAM D...
Note that the oxygen anion is assumed to be responsible for the ferroelectric switching in doped hafnium oxide. This is in contrast to perovskite-based ferroelectrics were one of the cations (in case of PZT, this is either Ti4+ or Zr4+) moves during polarization switching. Since the hafnium ...
in epitaxial HfO2films with a high degree of structural order (crystallinity). An out-of-plane polarization value of 50 μC cm–2has been observed at room temperature in Y-doped HfO2(111) epitaxial thin films, with an estimated full value of intrinsic polarization of 64 μC cm–...