As a high-k material,hafnium oxide(HfO_(2))has been used in gate dielectrics for decades.Since the discovery of polar phase in Si-doped HfO_(2) films,chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO_(2) based thin films....
et al. Complex internal bias fields in ferroelectric hafnium oxide. ACS Appl. Mater. Interfaces 7, 20224–20233 (2015). CAS Google Scholar Hoffmann, M. et al. Stabilizing the ferroelectric phase in doped hafnium oxide. J. Appl. Phys. 118, 072006 (2015). Google Scholar Zhou, D. Y. ...
We report that crystalline phases with ferroelectric behavior can be formed in thin films of SiO2doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO2crystallize in a monoclinic/tetragonal phase mixture. We observed that the formation of the monoclinic phase...
Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO2), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results ...
Note that the oxygen anion is assumed to be responsible for the ferroelectric switching in doped hafnium oxide. This is in contrast to perovskite-based ferroelectrics were one of the cations (in case of PZT, this is either Ti4+ or Zr4+) moves during polarization switching. Since the hafnium ...
properties of ferroelectric hafnium oxide and its integration into future devices. He is primarily involved in process integration, device characterization, and reliability improvement. Previously, he worked at the Infineon/Qimonda DRAM D...
such as introducing the metal oxide as electrode, annealing the sample above the curie temperature, and irradiating with ultraviolet (UV) light[2,6–8]. However, the ferroelectric fatigue in ion-displacive ferroelectric polarization inevitably happens due to the mobile charge defects (Fig. 1a). ...
We report that crystalline phases with ferroelectric behavior can be formed in thin films of SiO2 doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol. % of SiO2 crystallize in a monoclinic/tetragonal phase mixture. We observed that the formation of the monoclinic ph...
We suggest a facile way to prepare precursor solutions with metal salts and alcohol and fabricate ultrathin ferroelectric yttrium-doped hafnium oxide films on Pt(111)/TiO 2 /SiO 2 /Si substrates by chemical solution deposition and post-annealing treatment. The samples were prepared with 5.2mol% ...
doped hafnium oxidenonvolatile memoryelectrocalroric effectspyroelectricityThe recent progress in ferroelectricity and antiferroelectricity in HfO2 -based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3 , BaTiO3 , and SrBi2 ...