High dielectric constant oxides 来自 Semantic Scholar 喜欢 0 阅读量: 233 作者: Robertson, J.摘要: The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too...
US5473171 * 1994年4月4日 1995年12月5日 Texas Instruments Incorporated High-dielectric constant oxides on semiconductors using a Ge buffer layerUS5473171 1994年4月4日 1995年12月5日 Texas Instruments Incorporated High-dielectric constant oxides on semiconductors using a Ge buffer layerUS5473171 * Apr...
1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
high dielectric constant oxides:高介电常数氧化物 热度: Determination of Dielectric Constant介电常数的测定 热度: dielectric constant in graphene materials:在石墨烯材料的介电常数 热度: Bull.Mater.Sci.,Vol.31,No.1,February2008,pp.55–59.©IndianAcademyofSciences. ...
High dielectric constant oxides will soon be needed to replace silicon dioxide as the gate dielectric material in complementary metal oxide semiconductor technology. The oxides must have band offsets with silicon of over 1 eV for both electrons and holes in order to have low leakage currents. We...
High dielectric constant gate oxides for metal oxide Si transistors The scaling of complementary metal oxide semiconductor transistors has led to the silicon dioxide layer, used as a gate dielectric, being so thin (1.4nm) t... J Robertson - 《Reports on Progress in Physics》 被引量: 1462发表...
High-dielectric constant thin film metal oxides on siliconwafers for capacitor applications and methods of manufacture. Mukherjee S P,Phillips M L F,Thoms T P S. U.S. Patent8,481,106 . 2013Mukherjee S P,Phillips M L F,Thoms T P S.High-dielectric constant thin film metal oxides on ...
This method should be applicable to other mixed metal oxides of current interest, such as high dielectric constant strontium ... RG Gordon,C Feng,NJ Diceglie,... - 《Mrs Online Proceedings Library Archive》 被引量: 27发表: 1997年 Source reagent composition for CVD formation of Zr/Hf doped...
High dielectric constant oxides. Eur. Phys. J. Appl. Phys. 28, 265–291 (2004). Article Google Scholar Chhowalla, M., Jena, D. & Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 11, 16052 (2016). Article Google Scholar Fiori, G. et al. Electronics ...
Proposed universal relationship between dielectric breakdown and dielectric constant. In 2002 IEEE International Electron Devices Meeting (IEDM) 633–636 (IEEE, 2002). Robertson, J. High dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys. 69, 327–396 (2005). Article...