with differentdielectric constantorthe charge release capability of the two different [...] china-otem.com china-otem.com 静电的产生源于塑料的电子结构,具有不同介电常数或不同电荷释放能力的两种材料接触摩擦时会发生电荷的转移或堆积,分离后有电位(电压)而有可能发生静电放电( ESD)。
layerofoxidesofhigherdielectricconstant(κ)or‘highK’gateoxidessuchashafniumoxideandhafniumsilicate.Littlewasknownaboutsuchoxides,anditwassoonfoundthatinmanyrespectstheyhaveinferiorelectronicpropertiestoSiO2,suchasatendencytocrystalliseandahighconcentrationofelectronicdefects.Intensiveresearchisunderwaytodeveloptheseoxides...
High dielectric constant oxides 来自 Semantic Scholar 喜欢 0 阅读量: 222 作者: Robertson, J.摘要: The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too...
Trends in the ultimate breakdown strength of high dielectric-constant materials. IEEE Trans. Electron Devices 50, 1771–1778 (2003). Article CAS Google Scholar Chen, I.-C., Holland, S. & Hu, C. Electrical breakdown in thin gate and tunneling oxides. IEEE Trans. Electron Devices 32, 413...
Colossal dielectric constant in high entropy oxides. Phys Status Solidi-R. 2016;10:328-333.Berardan D, Franger S, Dragoe D, Meena AK,Dragoe N. Colossal dielectric constant in high entropy oxides. physica status solidi (RRL) - Rapid Research Letters;10:328-333 (2016). https://doi.org...
The agreement between measured dielectric polarizabilities as determined from the Clausius-Mosotti equation and those calculated from the sum of oxide polarizabilities according to α D (mineral) = Σα D (oxides) for this group of spinels ranges from + 1.1 to + 3.2%, well above the agreement ...
Measurements of the dielectric constant of thin oxides have concluded that the band gap of thermally grown oxides thicker than 2.3 nm is 8.95 eV, regardless of the thickness [18]. Furthermore, some researchers have concluded that the stress in the oxide next to the interface is relieved after...
Colossal dielectric constants in transition-metal oxides Many transition-metal oxides show very large ("colossal") magnitudes of the dielectric constant and thus have immense potential for applications in modern ... P.,Lunkenheimer,S.,... - 《European Physical Journal Special Topics》 被引量: ...
Concentration dependence of the dielectric constant in mixed oxides MxOyMp′Oq The dielectric constants in mixed oxidesZrO2+Y2O3,Ta2O5+TiO2,Ta2O5+Y2O3,andZrO2+SiO2are examined in the context of the oxide additivity rule for molecular ... RAB Devine,AG Revesz - 《Journal of Applied Physics》 ...
This is also a semiconductor structure, comprising: a semiconductor substrate; a germanium layer on the semiconductor substrate; and a high-dielectric constant oxide on the germanium layer. Preferably the germanium layer is single-crystal. Preferably the substrate is silicon and the germanium layer is...