Thehighdielectricconstantischaracteristicofhydrogen bondedliquids. 高介电常数具有氢键液体的特征。 www.ecd123.com 3. Theadditionofsolventwithhighdielectric-constantwould retardcatecholtert-butylation. 反应体系中加入高介电常数的溶剂不利于邻苯二酚的叔丁基化。
1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
High dielectric constant Ta/sub 2/O/sub 5/ capacitors intended for dynamic random access memory applications are investigated. Capacitors with a Au/Ta/sub 2/O/sub 5//Pt/Ti structure on silicon wafer are fabricated. The Ta/sub 2/O/sub 5/ thin film is deposited by rf magnetron sputtering...
bya material of lower dielectric constant such as SiO 2 F x a e-mail: jr@eng.cam.ac.uk or SiOCH alloys. But the most serious problem in logic circuits is now in the FET “gate stack”, that is the gate electrode and the dielectric layer between the gate and the ...
Electrical properties of La-doped Al2O3 films on Si(100) substrates as a high-dielectric-constant gate material Amorphous La-doped Al2O3 (La: Al2O3) thin films are deposited on n-type (100) Si substrates by rf magnetron co-sputtering. The composition of the deposited... Liu YP,Lan ...
PURPOSE:A high-dielectric constant film excellent in drawability, etc., and suitable as a film for use in capacitors and piezo-electric elements, prepared by using an inorganic dielectric powder having a specified or higher dielectric constant and a coupling agent to a thermoplastic polymer film....
Diamond (C) high-frequency dielectric constantdoi:10.1007/10551045_193SemiconductorsGroup IV Elements, IV-IV and III-V Compounds. Part a - Lattice PropertiesSummary This document is part of Subvolume A1a 'Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties' of Volume ...
We find anomalously large Born effective charges and a large static dielectric constant dominated by lattice polarization, which should reduce carrier scattering, trapping, and recombination by screening charged defects and impurities. Defect calculations show that CsGeI3 is a p-type semiconductor and ...
We designed dielectric gels, a new type of polymer-based dielectric material. By using solvents with high dielectric constants, the gels achieve a unique combination of ultra-high dielectric constant, low elastic modulus, and excellent transparency, whic
Preparation of high dielectric constant thin films of CaCu :高介电常数薄膜制备的研究of,薄膜,高介,high,films,高介电常数,介电常数,CaCu,thin,High 文档格式: .pdf 文档大小: 748.78K 文档页数: 5页 顶/踩数: 0/0 收藏人数: 0 评论次数: