1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
A dielectric layer ( 16 ) is formed between the electrodes. Preferably, the dielectric layer has a dielectric constant greater than 25 and an adequate conduction band offset with silicon. Exemplary embodiments proposed use the following material systems: Hf...
The dramatic scaling down of silicon integrated circuits has led to an intensive study of high dielectric constant materials as an alternative to the conve... HK Tyagi,PJ George - 《Journal of Materials Science Materials in Electronics》 被引量: 17发表: 2008年 Optimization of Organotin Polymers ...
These structures my also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thinfilm piezoelectric and thin-film electro-optic oxides. 申请人:TEXAS INSTRUMENTS INCORPORATED 代理人:Brian A. Carlson,James C. Kesterson,Richard...
High dielectric constant materials such as Barium Strontium Titanate (BST) will be necessary for future (>1 gigabit) high-density memories. The integration of a new material into well-established silicon processing facilities is a comple... V Balu 被引量: 0发表: 1999年 Carbonaceous electrode mat...
关键词: MIS devices electric breakdown electric strength permittivity semiconductor device reliability Boltzmann processes Lorentz-relation/Mossoffi-field breakdown strength field-acceleration parameter high dielectric-constant materials DOI: 10.1109/TED.2003.815141 被引量: 238 ...
For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration1,2. However, ...
Developing alternative high dielectric constant (k) materials for use as gate dielectrics is essential for continued advances in conventional inorganic CMO... Dibenedetto,Sara,A.,... - 《Journal of the American Chemical Society》 被引量: 28发表: 2009年 Method of Enhancing the Sensitiveness of Alk...
substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon...
However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-κ single-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D...