A dielectric layer ( 16 ) is formed between the electrodes. Preferably, the dielectric layer has a dielectric constant greater than 25 and an adequate conduction band offset with silicon. Exemplary embodiments proposed use the following material systems: Hf...
1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
High dielectric constant materials 专利名称：High dielectric constant materials 发明人：Shrinivas Govindarajan 申请号：US11031716 申请日：20050107 公开号：US20060151823A1 公开日：20060713 专利内容由知识产权出版社提供 专利附图：摘要：A capacitor () includes a substrate () and two metal electrodes (). A...
摘要: In the design of high-frequency (or fast-impulse) capacitors required to hold off high voltages, one can use high-dielectric-constant materials (e.g., certain ceramics). This paper considers some of the high-frequency problems of such capacitors and techniques to mitigate them....
Microwave Measurement of High-Dielectric- Constant Materials A particularly severe source of error in the microwave measurement of high dielectric constants has been the presence of small air gaps between dielectric ... SB Cohn,KC Kelly - 《IEEE Trans.microw.theory Tech》 被引量: 98发表: 1966年...
But these materials are generally not able to withstand electrostatic fields as intense as low-dielectric-constant substances such as air. If the voltage across a dielectric material becomes too great that is, if the electrostatic field ... T Clark,J Mcdermit,DJ Hultine,... - US 被引量:...
Composite dielectric material composite dielectric material for inorganic dielectric powders of the present invention has a high filling property, exhibits high dielectric constant when used as a complex with the polymer materials, and electronic components, printed ... 田邉信司,成重尚昭 被引量: 0发...
关键词: MIS devices electric breakdown electric strength permittivity semiconductor device reliability Boltzmann processes Lorentz-relation/Mossoffi-field breakdown strength field-acceleration parameter high dielectric-constant materials DOI: 10.1109/TED.2003.815141 被引量: 238 ...
MFMOS MFMOS CAPACITORS WITH HIGH DIELECTRIC CONSTANT MATERIALS AND A METHOD OF MAKING THE SAME PURPOSE: A MFMOS capacitor having high dielectric constant material and manufacturing method therefor are provided to reduce the operation voltage of the d... HS Teng,LI Tingkai,MA Yanjun,... 被引...
For next-generation nanoelectronics, high-mobility two-dimensional (2D) layered semiconductors with an atomic thickness and dangling-bond-free surfaces are expected as channel materials to achieve smaller channel sizes, less interfacial scattering and more efficient gate-field penetration1,2. However, ...