1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
We report recent and ongoing theoretical studies of the dielectric properties of high-dielectric-constant oxides comprising transition metal and rare earth cations Results and trends are discussed for crystal and amorphous phases derived from two main structural classes: bixbyite, typical of X2O{sub}3...
Lu J X,et al.Silver/polymer nanocomposite as a high-k polymer matrix fordielectric composites with improved dielectric performance. Journal ofMaterials ... J Lu,Moon, Kyoung-Sik,CP Wong - 《Journal of Materials Chemistry》 被引量: 101发表: 2008年 Low dielectric constant organic dielectrics base...
高K介质 (High-k Dielectric)和替代金属栅 (RMG)工艺 2007年,Intel公司宣布在 45nm CMOS 工艺节点上成功地使用高k氧化铪基(Hf-oxide Based)介质和金属栅工艺,可以显著减少栅介质泄漏电流和增加栅导电能力。 但高k氧化铪基栅介质较易被源漏退火步骤的热过程引起结晶化,导致较大的泄漏电流,因此高k介质金属栅模块...
A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge ...
(EMAILWIRE.COM, April 27, 2019 ) High-k dielectric material is defined as the material which has high dielectric constant k. These materials are principal insulators where negligible current flows from the material during the application of voltage through it. The growi...
作者: K. M. Rabe 摘要: A first-principles method, based on density functional perturbation theory, is presented for computing the leading order tunability of high-dielectric-constant materials.关键词: Materials Science DOI: 10.1557/PROC-718-D8.3 ...
AtomiclayerdepositionWhentheLa/(La+Hf)atomicpercentratiowas49.1%,thegrowthrateoftheLHOfilmwas0.5Å/cycle,with High-koxideadielectricconstantof16.3.AstheLaconcentrationwasincreased,thedielectricconstantdecreased.In addition,wefoundthataLa-hydratephase(La–O–H)canbeeasilyformedwhentheLa/(La+Hf)isover...
A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III
Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs). However, it remains challenging to integrate ultrathin and uniform high-κ dielectrics on 2D semiconductors to fabricate FETs with la