1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
Thehighdielectricconstantischaracteristicofhydrogen bondedliquids. 高介电常数具有氢键液体的特征。 www.ecd123.com 3. Theadditionofsolventwithhighdielectric-constantwould retardcatecholtert-butylation. 反应体系中加入高介电常数的溶剂不利于邻苯二酚的叔丁基化。
High Dielectric Constant (High k) Polymer Compositescompositesdielectric propertyhigh dielectric constantuniform inorganic particles0-3D fillerpercolationdoi:10.1002/0471440264.PST674Jie ChenP. JiangXingyi HuangAmerican Cancer Society
1、High-k与Low-k的分析 近十年来CPU业者每发表1款新主打CPU,就会顺带标榜该芯片所用的制程技术,最初只标榜尺寸缩密性制程,而近五年来更是强调各种新材质性制程,倘若不去了解新材质制程的意义,那么也将愈来愈不了解新CPU的价值意义过去IBM微电子发表Low k Dielectric(低介电质绝缘,或称:低介电常数绝缘)...
However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-κ single-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D...
Characterization of organic low-dielectric-constant materials using optical spectroscopy The dielectric function spectra of low dielectric constant (low-k) materials have been determined using high-precision four-zone null spectroscopic ellipso... K Postava,T Yamaguchi,T Nakano - 《Optics Express》 被引...
Preparation of high dielectric constant thin films of CaCu :高介电常数薄膜制备的研究of,薄膜,高介,high,films,高介电常数,介电常数,CaCu,thin,High 文档格式: .pdf 文档大小: 748.78K 文档页数: 5页 顶/踩数: 0/0 收藏人数: 0 评论次数:
high dielectric constant anyone please explain what relationship and effect to the antenna performance if we use high dielectric constant? i also want to know what relationship if dielectric constant is high what happened to efficiency and the gain for antenna performance?
Polymer dielectrics having high dielectric constant, high temperature capability, and low loss are attractive for a broad range of applications such as film capacitors, gate dielectrics, artificial muscles, and electrocaloric cooling. Unfortunately, it is generally observed that higher polarization or diele...
This is based on the higher dielectric constant of Si3N4 and on its resistance to oxidation. Although the nitrogen introduces positive fixed charges, carrier mobility is not degraded. Secondly, we investigate whether Ti-based ‘higher-k’ dielectrics have the potential to ultimately replace Hf. ...