A vertical GaN power MOSFET featuring an integrated fin-shaped non-junction diode (FDMOS) is proposed to improve reverse conduction and switching characteristics. Its static and dynamic characteristics are studied and analyzed by Sentaurus TCAD simulation. Compared with the conventional MOSFET (Con. ...
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vert... NicolòZagni,M Fregolent,AD Fiol,... - 《Journal ...
The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the d... K Mukherjee,CD Santi,M Borga,... - 《Materials》 被引量: 0发表: 2021年 Vertical GaN Power Electronics – Opportunities and Challenges...
A vertical power MOSFET with hexagonal cells by using high-k (Hk) insulator (Hk-MOSFET) in voltage-sustaining region is studied. Both cases of the Hk-MOSFE... LYU,X Chen - 《IEEE Transactions on Electron Devices》 被引量: 8发表: 2013年 SiC Integrated MOSFETs A new design and processing...
Si power MOSFET (IRHNJ597230) > 10μA (10μA at -160 V) ~106 200mm Si ~$0.08 Leakage current (density) at -200V Ion/Ioff ratio Available substrate Substrate cost per cm2 GaN-on-Si vertical (this work) < 1μA (10-4-10-3A/cm2) ~106 200mm Si ~$0.08 Ga...
The existing silicon-based semiconductor devices are close to the theoretical limit of Si materials and can no longer meet the performance requirements of future power devices. However, the cost of transistors is constantly rising, and the performance improvement is slow, gradually moving towards the...
MOSFETLogic gatesElectric breakdownElectric fieldsResistanceIn this letter, we have examined the impact of trench dimensions on the breakdown voltage and ON-resistance of trench MOSFETs fabricated on sapphire and bulk GaN substrates. Contrary to simulation studies, the breakdown voltage decreased with an...
It is always difficult to get a good electrostatic control from the gate when the channel is thick in a MOSFET. It has been proved through planar devices that InAs NW FETs based on thicker NWs have smaller on-off ratio [26]. To evaluate the properties of the FETs based on the present ...
The device characteristics of this device are equivalent to those of the vertical-type hexagonal trench power MOSFET obtained using SiC and GaN. The 2DHG can be induced independently of the crystal orientation such that all hexagonal trench sidewalls can be used as the drift layer. The maximum ...
1. Field of the Invention This invention relates to a silicon carbide semiconductor device, especially to an insulated gate type field effect transistor such as a high-power vertical MOSFET, and a method of manufacturing the same. ... E Okuno,T Endo,S Amano 被引量: 96发表: 2000年 Compound...