type-III band alignmentSaturable absorption responseInterlayer electron transitionA R T I C L E I N F O Keywords: van der Waals heterostructures Bi 2 S 3 /MoS 2 , type-III band alignment Saturable absorption response Interlayer electron transition A B S T R A C T Nonlinear optical ...
BindingwithFibronectin-1andD-BandTypeIICollagenFibers Heart,Kidney,SmoothMuscle XIX COL19A1 [a1(XIX)][a1(XIX)][a1(XIX)][a1(XIX)] N-terminusOligomerization BasementMembraneofDifferentiatedMuscleCells XX COL20A1 a1(XX) PresumedBindingwithCollagenFibers CornealEpithelium ReticularCollagen XXII COL22A1 CO...
Efficient CO-CA transfer in highly deuterated proteins by band-selective homonuclear cross-polarization. J. Magn. Reson. 230, 205–211 (2013). 22. Fujii, T. et al. Structure of a type III secretion needle at 7-A resolution provides insights into its assembly and signaling mechanisms. Proc...
When an extract of human hair follicle was immunoblotted using the antibody after SDS–PAGE, an immunoreactive band corresponding to human PAD type III was observed (Figure 8b, lane 7). These results demonstrated that anti-hPAD3 antibody was monospecific for PAD type III. On the other hand,...
we observed disappearance of the band corresponding to RNA, but not the DNA (Fig.4a). To determine if Csm also cleaved ssDNA at the mismatch bubble in the DNA, we added MnCl2. This led to complete degradation of RNA and partial degradation of the nontemplate strand of DNA (Fig.4a). ...
For example, the N-terminal 70 kDa region, the 1st type III repeat and the 10th type III repeat are thought to be important for the proper alignment of fibronectin molecules during matrix assembly [15–22]. We and others have shown that a recombinant protein representing a portion of the ...
This band was absent from the strain Rdmod::kan-derived (non-methylated) plasmid digest (Figure 1b), indicating inhibition of ApoI digestion by methylation of the DNA by Mod. We conclude that Mod from strain Rd has the same site specificity as HinfIII (50-CGAAT-30...
In such configurations, the contact resistance is relatively high and effectively limited by the silicon or SiGe valence band alignment to the pinning level in the metal. Typical industry approaches to forming contacts generally employ alloys with bandgaps in the range 0.5-1.5 eV, or higher. ...
At least a portion of a valence band of the second material has a higher energy level than at least a portion of the conduction band of the first semiconductor material (type-III band alignment). A flow of a majority of free carriers across the semiconductor junction is diffusive. A region...
Broken-gap (type-III) two-dimensional (2D) van der Waals heterostructures (vdWHs) offer an ideal platform for interband tunneling devices due to their broken-gap band offset and sharp band edge. Here, we demonstrate an efficient control of energy band alignment in a typical type-III vdWH,...