在ii型能带排列中,导带的最低能级和价带的最高能级分别位于两个半导体中,这意味着电子和空穴在异质结中分别是在不同的半导体中迁移。 ii型能带排列具有许多独特的电子学和光学性质,已经在半导体器件的设计和应用中得到广泛应用。以下是一些与ii型能带排列相关的内容: 1.能带对齐理论: -能带对齐是理解ii型能带排列...
The vdWH has an indirect band gap with a connatural interlaced-gap type-II band alignment, so the electrons and holes are able to spatially dwell in the InSe and AlN layer, respectively. Especially, the AlN/InSe vdWH owns a higher carrier mobility for both electrons and holes reaching up...
是能带台阶的一种，半导体和半导体或金属接触的时候会出现能带台阶，包括导带台阶和价带台阶，然后根据台阶...
相关成果以“Type-II/type-II band alignment to boost spatial charge separation: A case study of g-C3N4quantum dot/a-TiO2/r-TiO2for highly efficient photocatalytic hydrogen and oxygen evolution”为题,发表在Nanoscale期刊(DOI:10.1039/d0nr00176g),文章第一作者为周丙新博士后(本报道作者)。 图文简介 研...
Hazdra, E. Hulicius, Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition, J. Phys. D 46 (2013) 095103-095111, http://dx.doi.org/10.1088/0022-3727/46/9/095103....
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A Type-I to Type-II band alignment transition is demonstrated via introducing an interlayer of Ce 2 S 3 , a potential photocatalyst for H 2 evolution, between SnS 2 and CeO 2 . Subsequently, this heterostructure demonstrates tunability in light absorption, charge transfer kinetics, and material...
Zheng, XiaoliXu, QunChen, ZhiminRen, YumeiYan, BoESApplied Surface ScienceT. Xu, Y. Wang, X. Zhou, X. Zheng, Q. Xu, Z. Chen, Y. Ren, B. Yan, Fabrication and assembly of two-dimensional TiO2/WO3*H2O heterostructures with type II band alignment for enhanced photocatalytic performance,...
We present experimental verification of type II band alignment in a coherently strained Si0.7Ge0.3/Si(001) quantum well by studying photoluminescence energy shifts under external strains. A recent determination of type I band alignment from a similar experiment is shown to result from band-bending ...
Here, high-quality CsPbBr3/CdS heterostructures with a unique 1D morphology and type-II band alignment have been obtained through a 2-step physical vapor deposition strategy, in which CsPbBr3 microcubes were grown on the side wall of pre-grown free-standing CdS microwires. Owing to the ...