比如,对于电子器件来说,常用的为 type-I band alignment, 要求 CBO/VBO 大于 1eV 才能更有效的束缚电子/空穴,减小漏电[2]。type-II 异质结在异质结光催化分解水领域,可以有效减小电子空穴对符合,提高光催化效率[3]。 界面两侧的能带对齐(band alignment)依赖于两侧材料的电荷转移。当异质结两侧无电荷转移时候,C...
Polarized piezoreflectance (PzR) and photoreflectance (PR) are employed to study band alignment in Ga0.46In0.54Ny P1–y/GaAs heterostructures grown by gas-source molecular-beam epitaxy. The features near the band edge of Ga0.46In0.54Ny P1–y show strong polarization dependence, indicating the ...
Herein, we grew SnS 2 /Bi 2 X 3 (X = Se, Te) van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition. The band alignment, measured by high-resolution X-ray photoelectron spectroscopy, suggested the successful design of type-I SnS 2 /Bi 2 Se 3...
是能带台阶的一种,半导体和半导体或金属接触的时候会出现能带台阶,包括导带台阶和价带台阶,然后根据台阶...
从能带结构分的,成阶梯状的是2,另一种就是1,可以google一下,有综述
Meanwhile, the heavy hole effective mass along [1 0 0] direction is greatly reduced due to the transition of band alignment, which will improve the photoelectric conversion efficiency. Our works indicate that such a controllable band alignment of Pd2Se3/CsSnBr3 heterostructure holds a significant ...
ii型能带排列(type-ii band alignment)的半导体异质结 半导体异质结是由两个不同材料的半导体构成的结构,其中每个材料的能带结构不同。能带排列是指异质结中能带边缘的对齐方式。在ii型能带排列中,导带的最低能级和价带的最高能级分别位于两个半导体中,这意味着电子和空穴在异质结中分别是在不同的半导体中迁移。
ii型能带排列(type-ii band alignment)的半导体异质结 1. 引言 1.1 概述 在当前半导体领域的研究中,半导体异质结作为一种重要的结构形式,被广泛应用于光电子器件、太阳能电池、传感器等领域。其中,ii型能带排列的半导体异质结因其特殊的能带布局而备受关注。本文将重点讨论ii型能带排列在半导体异质结中的性质和应用。
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TableStyleRowBandSize TableVerticalAlignmentValues TableWidth TableWidthDxaNilType TableWidthType TableWidthUnitValues TableWidthValues 选项卡 TabStop TabStopLeaderCharValues TabStopValues Tag TargetScreenSize TargetScreenSizeValues TemplateCode TemporarySdt Text TextAlignment TextBoxContent TextBoxFo...