ii型能带排列(type-ii band alignment)的半导体异质结 半导体异质结是由两个不同材料的半导体构成的结构,其中每个材料的能带结构不同。能带排列是指异质结中能带边缘的对齐方式。在ii型能带排列中,导带的最低能级和价带的最高能级分别位于两个半导体中,这意味着电子和空穴在异质结中分别是在不同的半导体中迁移。
2. ii型能带排列的半导体异质结: 2.1 ii型能带排列概念解释: ii型能带排列是指在半导体异质结中,导带和价带的边界发生了反转,即导带和价带在空间分布上相互交叠或发生错位。与i型能带排列不同,ii型能带排列在异质结中形成了一个电子束缚态,这种电子束缚态能够限制电子的移动并引起诸如增强光吸收、光致发光等现象...
The vdWH has an indirect band gap with a connatural interlaced-gap type-II band alignment, so the electrons and holes are able to spatially dwell in the InSe and AlN layer, respectively. Especially, the AlN/InSe vdWH owns a higher carrier mobility for both electrons and holes reaching up...
比如,对于电子器件来说,常用的为 type-I band alignment, 要求 CBO/VBO 大于 1eV 才能更有效的束缚电子/空穴,减小漏电[2]。type-II 异质结在异质结光催化分解水领域,可以有效减小电子空穴对符合,提高光催化效率[3]。 界面两侧的能带对齐(band alignment)依赖于两侧材料的电荷转移。当异质结两侧无电荷转移时候,C...
是能带台阶的一种，半导体和半导体或金属接触的时候会出现能带台阶，包括导带台阶和价带台阶，然后根据台阶...
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BAND ALIGNMENTWELLSThe exciton properties of Si/Si1-x Ge (x) cylindrical quantum wires (QWRs) are calculated using the variational method and taking ... Chaves ASilva JDEFreire JADDegani MHFreire VNFarias GD - 《Journal of Materials Science》 被引量: 0发表: 2007年 Excitonic properties of ...
We present experimental verification of type II band alignment in a coherently strained Si0.7Ge0.3/Si(001) quantum well by studying photoluminescence energy shifts under external strains. A recent determination of type I band alignment from a similar experiment is shown to result from band-bending ...
Type II band alignmentWO3·H2OTiO2Supercritical CO2The recombination of photo-induced charges is one of the main issues to limit the large-scale applications in photocatalysis and photoelectrocatalysis. To improve the charge separation, we fabricate a novel type II 2D ultrathin TiO2/WO3·H2O ...
Bandlignmentfeterostructures with pseudomorphic GaSb_(1-x)P_x/GaPelf-assembled quantum dots (SAQDs) lyingn wetting layer wastudied.oexistencefype-Indype-IIandlignment wasound withinheameeterostructure. Wetting layerasandlignmentfype-I withhe lowest electronictateelongingohe X_(XY) valleyf GaSb...