ii型能带排列(type-ii band alignment)的半导体异质结 1. 引言 1.1 概述 在当前半导体领域的研究中,半导体异质结作为一种重要的结构形式,被广泛应用于光电子器件、太阳能电池、传感器等领域。其中,ii型能带排列的半导体异质结因其特殊的能带布局而备受关注。本文将重点讨论ii型能带排列在半导体异质结中的性质和应用。
ii型能带排列(type-ii band alignment)的半导体异质结 半导体异质结是由两个不同材料的半导体构成的结构,其中每个材料的能带结构不同。能带排列是指异质结中能带边缘的对齐方式。在ii型能带排列中,导带的最低能级和价带的最高能级分别位于两个半导体中,这意味着电子和空穴在异质结中分别是在不同的半导体中迁移。
The vdWH has an indirect band gap with a connatural interlaced-gap type-II band alignment, so the electrons and holes are able to spatially dwell in the InSe and AlN layer, respectively. Especially, the AlN/InSe vdWH owns a higher carrier mobility for both electrons and holes reaching up...
是能带台阶的一种，半导体和半导体或金属接触的时候会出现能带台阶，包括导带台阶和价带台阶，然后根据台阶...
从能带结构分的，成阶梯状的是2，另一种就是1，可以google一下，有综述
Hazdra, E. Hulicius, Type I-type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition, J. Phys. D 46 (2013) 095103-095111, http://dx.doi.org/10.1088/0022-3727/46/9/095103....
We present experimental verification of type II band alignment in a coherently strained Si0.7Ge0.3/Si(001) quantum well by studying photoluminescence energy shifts under external strains. A recent determination of type I band alignment from a similar experiment is shown to result from band-bending ...
The band alignment, measured by high-resolution X-ray photoelectron spectroscopy, suggested the successful design of type-I SnS 2 /Bi 2 Se 3 and type-II SnS 2 /Bi 2 Te 3 heterostructures. The SnS 2 /Bi 2 X 3 heterostructure greatly improved the photoelectric response of a ...
Type II band alignmentWO3·H2OTiO2Supercritical CO2The recombination of photo-induced charges is one of the main issues to limit the large-scale applications in photocatalysis and photoelectrocatalysis. To improve the charge separation, we fabricate a novel type II 2D ultrathin TiO2/WO3·H2O ...
Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots Band alignment of heterostructures with pseudomorphic GaSb1 − x P x /GaP self-assembled quantum dots (SAQDs) lying on a wetting layer was studied. Coexi......