Surface Termination and Band Alignment in 2DHeterostructuresRaheel Hammad*, Snehith Adabala and Soumya Ghosh*E-mail:AbstractHeterostructures are ubiquitous in many optoelectronic devices and as photocata-lysts. One of the key features of a heterojunction is the proper band alignment betweenthe two ...
Our results suggest that the EAR can successfully predict the band alignment of TMD heterostructures.LainJong LiMingHui ChiuWeiHsuan TsengHungWei ShiuChiaHao ChenChihI WuChiu, M. H. et al. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction. Nat. Commun. 6, 7666 (...
Figure 1. Different types of band alignment in heterojunction. Read more View article Strontuim titanate aided water splitting: An overview of current scenario Rosmy Joy, Suja Haridas, in International Journal of Hydrogen Energy, 2021 Conclusion The main objective of the present review was to prov...
Studies on band-offset and band-alignment of heterojunction of highly c-axis oriented ZnO thin films grown on n-Ge (1 1 1) by pulsed laser deposition show a type-II band alignment with the valence band offset (ΔEV) of 3.1±0.2eV. The valence band spectra of this heterojunction show ba...
band alignment, built-in potential, and the absence of conductivity at the lacro 3 =srtio 3 001 heterojunction Core-level and valence-band x-ray photoemission spectra measured for molecular-beam-epitaxy-grown LaCrO 3 / SrTiO 3 ( 001 ) yield band offsets and potenti... SA Chambers,L Qiao...
The concept ‘the interface is the device’ is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, whi...
In this work, we measured the band alignment of 2D/3D heterostructures of WSe _2 on n-doped, p-doped, and intrinsic GaN by x-ray photoelectron spectroscopy. The WSe _2 /n-GaN heterojunction exhibits type-II band alignment, with measured valence band offset (VBO) and conduction band offset...
Li J, Wei M, Du Q, Liu W, Jiang G, Zhu C. The band alignment at CdS/Cu2ZnSnSe4 heterojunction inter- face. Surface and Interface Analysis 2013; 45: 682-684. DOI: 10.1002/sia.5095J. Li, M. Wei, Q. Du, W. Liu, G. Jiang, and C. Zhu, "The band alignment at CdS/Cu2...
The semi-direct XPS technique used to measure the band offsets allows us to estimate the conduction band discontinuity, DEc, between b-In2S3 and SnO2 to ?0.45 eV. The band alignment of the b-In2S3/SnO2 heterostructure being known, we could estimate the Cu(In, Ga)Se2/b-In2S3 band ...
Electrical properties of alpha-Ir2O3/alpha-Ga2O3 pn heterojunction diode and band alignment of the heterostructure Corundum-structured iridium oxide (alpha-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with alpha-Ga2O3. We fabricated alpha-Ir...