This indirect band gap material is considered as a competitive basis for unconventional emitting structures for the near-infrared (λ<2μm) band. However, for mid- and long-wave IR (3-5 and 8-12μm) existing approaches do not work. As a part of the efforts to show that Si is a ...
This variation is observed for all phonon modes in Si and Ge, and we show this for representative cases where the initial electron states are at the band gap edges. Using these e-ph matrix elements, which include all possible phonon modes and electron bands within a relevant energy range, ...
Temperature-dependent PL measurements from 20 to 300K exhibited the luminescent mechanism of the present ZnO films to be near band excitonic emission. 展开 关键词: Experimental/ crystal microstructure deep levels elemental semiconductors II-VI semiconductors MOCVD nucleation scanning electron microscopy ...
expres- sion, it follows that: (i) the decrease of the breakdown voltage will result in a significant increase of the photoresponse, and (ii) it is possible to slightly increase the photoresponse by increasing the value of the built-in potential, which is restricted by the band gap of Si...
西安电子科技大学微电子学院,西安,710071) 201O-lO-13收稿.2010一l1-29收改稿 摘要:在分析(1l1)Si基应变材料[应变si/(1l1)si1-xGe一应变Si1-xGe/(1l1)si3~带结构的基础上,获得了 其态密度有效质量与应力及温度的理论关系,并在此基础上,进一步建立了300K时(111)Si基应变材料与应力相 关的本征载流子...
The PL peak positions are obtained as a function of excitation laser power for both samples, which shows that the PL peak energy of the Ge nanosheets agrees with the direct band-gap PL peak energy of Ge. This agreement suggests that the observed PL from the Ge nanosheets originates from ...
Indirect band gap of coherently strained GexSi1-x bulk alloys on silicon substrates DOI: http://dx.doi.org/10.1103/PhysRevB.33.1451.2 R People - 《Physical Review B Condensed Matter》 被引量: 592发表: 1985年 Low‐temperature silicon selective deposition and epitaxy on silicon using the therm...
Measurement of the band gap of GexSi1-x/Si strained-layer heterostructures. We have used photocurrent spectroscopy to measure the optical absorption spectra of coherently strained layers of Ge[sub x]Si[sub 1 - x] grown on 〈001... Lang,D.,V.,... - 《Applied Physics Letters》 被引量...
Fully gettered P at NC interfaces does not introduce defect levels within the HOMO-LUMO gap of the SiNC. The DOS of OH groups has an energy gap of approximants 8.0 eV, corresponding to 91% of expose a small shift of HOMO the and experimental band gap of LUMO to higher binding ...
A 0.4渭m p-channel silicon-on-insulator (SOI) metal-oxide-field-effect-transistor (MOSFET) is measured at 300K and 4K. Finite difference two dimensional nu... A Akturk,M Peckerar,M Dornajafi,... 被引量: 0发表: 2009年 Sub-band Gap Impact Ionization and Floating Body Effect in 0.15μ...