First-principles calculation based on density functional theory (DFT) with the generalized gradient approximation (GGA) were carried out to investigate the energy band gap structure of Si and Ge nanofilms. Calculation results show that the band gaps of Si(111) and Ge(110) nanofilms are indirect ...
A 30-band k·p method taking into account spin-orbit coupling is used to describe the band diagram of Ge, Si, and GaAs over the whole Brillouin zone on an extent of 5 eV above and 6 eV under the top of the valence band. The band diagrams provide effective masses in agreement with ...
Energy-band structure of Ge, Si, and GaAs: A thirty-band k·p method 机译:Ge,Si和GaAs的能带结构:三十带k·p方法 获取原文 获取原文并翻译 | 示例 获取外文期刊封面目录资料 开具论文收录证明 >> 页面导航 摘要 著录项 相似文献 相关主题 摘要 A 30-band k·p method taking into account spin...
Energy band structures are presented for three different types of Si‐Si x Ge1−x superlattices using an approach more rigorous than the envelope function approach and including spin‐orbit and strain effects. The directness of the energy bands has been found to depend exclusively on the superlat...
interface state density with energy plot measured by capacitance-voltage characteristics, we have derived the energy bandgap of strain-relaxed Si1-xGex (x: 0.4 and 0.7) for the first time at the device level, because the allowed states increases sharply near the conduction and valence bandedges...
Al x Ga 1 x As 1 y Sb y /InAs changes from a type-II broken-gap alignment to type-II staggered alignment near an Al mole fraction of 0.15 followed by a change from type-II to type-I near an Al mole fraction of 0.9. No type-II broken-band alignments are observed in the other ...
‘band gap energy’, is the amount of energy required to dislodge an electron from its covalent bond and allow it to become part of an electrical circuit. To free an electron, the energy of a photon must be at least as great as the band gap energy. However, photons with more energy ...
Electronic properties for a set of CdXO 3 (X = C, Si, Ge, Sn, Pb) crystals were investigated using the density functional theory (DFT) formalism ... A C.,Barboza,and,... - 《Chemical Physics Letters》 被引量: 13发表: 2009年 Electroluminescence in narrow-gap semiconductors CdxHg(1-...
The resultant parabola-like E vs k curve is important because it provides a useful way to distinguish between Si and Ge on the one hand, and GaAs and similar compound semiconductors on the other [1]. While the former are known as indirect band-gap semiconductors, the latter are direct ...
Erratum: ''Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si 1-x-y Ge x C y alloy layers on Si (100)'' [Appl. Phys. Le... Scitation is the online home of leading journals and conference proceedings from AIP Publishing and AIP Member Societies AS Amour...