First-principles calculation based on density functional theory (DFT) with the generalized gradient approximation (GGA) were carried out to investigate the energy band gap structure of Si and Ge nanofilms. Calculation results show that the band gaps of Si(111) and Ge(110) nanofilms are indirect ...
gap(sth.)动— 裂开动 · 使...形成缺口动 查看更多用例•查看其他译文 查看其他译文 © Linguee 词典, 2024 ▾ 外部资源(未审查的) The XFET architecture offers superior accuracy and thermal hysteresis totheband gapreferences. analog.com
It is ascertained that the levels at E c -0.28 eV and at E c -0.65 eV in the band gap of Si belong, most likely, to vacancies; the levels at E c -0.44 eV, at E c -0.86 eV, and, presumably, at E c -0.67 eV belong to intrinsic interstitial atoms....
A 30-band k·p method taking into account spin-orbit coupling is used to describe the band diagram of Ge, Si, and GaAs over the whole Brillouin zone on an extent of 5 eV above and 6 eV under the top of the valence band. The band diagrams provide effective masses in agreement with ...
interface state density with energy plot measured by capacitance-voltage characteristics, we have derived the energy bandgap of strain-relaxed Si1-xGex (x: 0.4 and 0.7) for the first time at the device level, because the allowed states increases sharply near the conduction and valence bandedges...
Energy band structures are presented for three different types of Si‐Si x Ge1−x superlattices using an approach more rigorous than the envelope function approach and including spin‐orbit and strain effects. The directness of the energy bands has been found to depend exclusively on the superlat...
Al x Ga 1 x As 1 y Sb y /InAs changes from a type-II broken-gap alignment to type-II staggered alignment near an Al mole fraction of 0.15 followed by a change from type-II to type-I near an Al mole fraction of 0.9. No type-II broken-band alignments are observed in the other ...
The method is applied to strained Si on a relaxedSi1xGexalloy. The values of the energy band gap, and of theΔ24conduction band splitting between the four equivalent in-plane valleysΔ4and the two valleys along the growth directionΔ2are in very good agreement with those reported in other ...
28p-S-5 ENERGY DISTRIBUTION OF INTERFACE STATES IN THE BAND GAP OF GaAs REFLECTING DIFFERENT OXIDATION STAGES ON THE GaAs SURFACE DEVELOPED THROUGH AN ULTR... H Kobayashi,I Jan,T Kubota - 《Meeting Abstracts of the Physical Society of Japan》 被引量: 0发表: 1999年 Energy distribution of in...
‘band gap energy’, is the amount of energy required to dislodge an electron from its covalent bond and allow it to become part of an electrical circuit. To free an electron, the energy of a photon must be at least as great as the band gap energy. However, photons with more energy ...