We use a sp 3 d 5 s * tight binding model to calculate the band structures for both Ge and Si nanowires oriented along the (1 0 0), (1 1 0) and (1 1 1) directions. We show that the nature of the band gap and the variation of the zone centre band gap with nanowire width ...
The scanning tunneling microscope is used to measure the spectrum of states for the Ge(111)2×1 and Si(111)2×1 surfaces. Detailed spectra, revealing the entire empty and filled state bands for both surfaces are obtained. Band gaps of 0.65+/-0.09 eV and 0.50+/-0.05 eV are found for ...
Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1−x Gex/Ge/Si1−xGex type-I quantum wells This paper presents the results of conduction band discontinuities calculation for strained/relaxed Si 1 x Ge x /Si 1 y Ge y heterointerfaces in Γ ... N...
A 30-band k·p method taking into account spin-orbit coupling is used to describe the band diagram of Ge, Si, and GaAs over the whole Brillouin zone on an extent of 5 eV above and 6 eV under the top of the valence band. The band diagrams provide effective masses in agreement with ...
The Ge-like indirect band gap of Ge1xySixSnyalloys has been determined over an extendedy>xrange using photoluminescence spectroscopy from films grown on Ge-buffered Si substrates. It is found that the compositional dependence of this transition can be fit with a bilinear expression of the form ...
The reduced band gap of the Si0.82Ge0.18alloy is deduced, taking into account both strain and heavy doping effects and compared to band‐gap narrowing found in Si. 展开 关键词: 7320Dx 7855Hx 8115Gh BAND STRUCTURE BORON ADDITIONS CHEMICAL VAPOR DEPOSITION DOPED MATERIALS ENERGY GAP EPITAXIAL ...
Germanium (Ge) pin photodiodes show clear direct band gap emission at room temperature, as grown on bulk silicon in both photoluminescence (PL) and electroluminescence (EL). PL stems from the top contact layer with highly doped Ge because of strong absorption of visible laser light excitation (...
Ge and Nb co-doped anatase TiO_2 films are prepared by using radio frequency magnetron sputtering.The structures,resistivities and band gap properties of the films,which depend on Ge and Nb doping amounts,sputtering power and annealing temperature,are discussed.It is found that the band gap an...
Re: band gap: Si and Diamond « Reply #1 on: May 21, 2006, 04:34:03 PM » When it comes to band gaps, I find it useful to think of the radial extension of the overlapping orbitals. The more diffuse the orbitals, the smaller the band gap.Think about an MO diagram for I2 ...
Band gap, in solid-state physics, a range of energy levels within a given crystal that are impossible for an electron to possess. Generally, a material will have several band gaps throughout its band structure (the continuum of allowed and forbidden elec