分享:用origin画Si-BAND STRUCTURE测band gap60 5/2 返回列表 上一页 1 2 查看: 4625 | 回复: 59 只看楼主@他人 存档 新回复提醒 (忽略) 收藏 在APP中查看 相关版块跳转 第一性原理 我要订阅楼主 ljw4010 的主题更新 60 5/2 返回列表 上一页 1 2 ...
Due to this inhomogeneous strain a change of the electronic surface structure occurs, resulting in a lowering of the surface band-gap on top of the buried islands. It was also possible to detect the buried islands by BEEM even though no more protrusions could be found on the surface of an...
A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. 展开 关键词: Multiple quantum wells Band gap Photoluminescence Strain measurement Band models ...
The band‐gap narrowing of SiGe strained layers has been determined for the first time, by means of PL measurements on boron‐doped Si0.82Ge0.18strained alloy up to 4×1019cm3. The reduced band gap of the Si0.82Ge0.18alloy is deduced, taking into account both strain and heavy doping ...
Band gap Narrowing in heavily B doped Si1-xGex strained layers重掺B对应变SiGe材料能带结构的影响 This paper presents a comprehensive study of the effect of heavy B doping and strain in Si1-xGex strained layers. On the one hand, bandgap narrowing (BGN) ... Yao Fei,Xue ChunLai,Cheng Bu...
1.双击打开BandStrBandStructure.xcd文件,从File下拉菜单中选Export…,保存文件为Si_BandStrBand Structure.csv; 2.用Excel打开,如下图: 从表中看出共有16组数据,均放在两列中,其中第一列数据是能带结构的横坐标,每组范围从0到1出现,如此反复。第二列是第一列岁对应的能量值。所以一组数据表示一条能带。上图...
自己搜集资料后捉摸，详细的说明通过MS-CASTEP模块导出数据，用origin画Si-BAND STRUCTURE测band gap！
We present a comprehensive investigation of the evolution of the photoluminescence band at ∼1.3 eV in plasma-deposited a-Si:H as a function of excitation frequency ṽex, where ṽex has been extended well into the band-tail region. When ṽex is lowered below the optical-absorption...
Re: band gap: Si and Diamond « Reply #1 on: May 21, 2006, 04:34:03 PM » When it comes to band gaps, I find it useful to think of the radial extension of the overlapping orbitals. The more diffuse the orbitals, the smaller the band gap.Think about an MO diagram for I2 ...
Band gaps of 0.65+/-0.09 eV and 0.50+/-0.05 eV are found for the Ge and Si surfaces, respectively. The results are compared with values for the band gaps obtained from recent quasiparticle calculations. 关键词: Surface states band structure electron density of states Structure of clean ...