In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to ...
Harris C, O’Reilly EP (2006) Nature of the band gap of silicon and germanium nanowires. Physica E 32:341–345C. Harris and E.P. O'Reilly, Nature of the band gap of silicon and germanium nanowires. Physica E: Low-Dimensional Systems and Nanostructures, 2006. 32(1-2 SPEC. ISS.): ...
Our theoretical studies are valuable in providing a guidance for the applications of Germanium nanowires in the field of microelectronics and optoelectronics.doi:10.48550/arXiv.1910.10957Xiong, WenWang, Jian-WeiFan, Wei-JunSong, Zhi-GangTan, Chuan-Seng...
There are controversial results among the available experimental data of the germanium sulfide band gap, as well as between these results and the theoretical model-based band calculations published to date. To elucidate this situation, we performed an ab initio calculation of its electronic structure ...
Band gap energy (eV) analysis Band gapenergy ofAgNPsis depended on the size of the particles. Several studies reported that the band gap energy ofNPsis inversely proportional to the size of the particles, which means smaller size of the particles lead to the higher band gap energy. Band gap...
Indirect band gap and band alignment for coherently strainedSixGe1−xbulk alloys on germanium (001) substrates 喜欢 0 阅读量: 18 作者: R.,People 摘要: Estimates of the fundamental (indirect) band gap and band alignments of coherently strained SixGe1-x alloys for growth on Ge(001) are gi...
temperatureandvoltagefortheconstantcurrentinthetemperaturerangeof275Kto333K. Withintheprecisionofourexperiment,theresultsobtainedareingoodagreementwiththe knownvalueenergygapinsilicon.ThetemperaturedependenceofE g forsiliconhasalsobeen studied. I.INTRODUCTION Thestudyofthebandgapstructureof asemiconductorisimportant...
Recall that the ioni- zation potential (IP) of a (non-polar) semiconductor specifies the energy of the VBM with respect to vacuum30. Very recently, the same group reported accurate IP estimation for a set of non-polar semiconductors in good agreement with experiment31. For GaP and GaSb, ...
Uniaxial strain is also predicted to induce an indirect-to-direct bandgap transition in germanium4, which could lead to efficient light emission from group-IV materials5. In epitaxial quantum dots, strain is used to switch between heavy and light holes in the ground-state exciton6, or to ...
The valence band maximum of AgNbO3 is thus shifted to more negative potentials by ∼ 0.6 V as compared to NaNbO3, causing the band gap of AgNbO3 to decrease to ∼ 2.8 eV.49 In addition, the valence band edge is raised but remains at a suitable energy to drive water oxidation, ...