In this research paper, I investigated dependence of energy band gap of germanium nanostructure (the case of quantum dot) on the size of the dot and the findings are in agreement with other theoretical and research results. Keywords: Energy gap; novel properties; size; nanometer scale; quantum...
Mg2Si0.3Sn0.7was found to possess a smaller band gap compared to Mg2Si0.4Sn0.6and Mg2Si0.5Sn0.5, which is promising for obtaining higher electrical conductivity[40]. As a comparison, band gaps for well-known semiconductors are 1.12eV for silicon (Si), 0.7eV for germanium (Ge) and 0.08...
The minimum room temperature band-gap energy values for some common semiconductors are 1.12 eV for silicon [61], 0.67 eV for germanium [61] and 1.35 eV for gallium arsenide [61]. For photovoltaic devices, the band-gap energy needs to be close to the peak of the energy range of visible ...
- Insulators: In insulators, there is a large energy gap between the valence band and the conduction band. Electrons cannot jump to the conduction band easily, making them poor conductors of electricity. Step 3: Analyze the Given Options- The options provided include: - Germanium (semiconductor)...
The valence‐band energy maxima vary much more with layer thickness than the conduction‐band minima. The maximum attainable band gaps correspond approximately to the band gap of the germanium‐containing material. 展开 关键词: Superlattices Band gap Band structure Conduction bands Germanium ...
The pressure dependence of the energy gap corresponding to allowed optical transitions in germanium has been measured at room temperature and pressures up to 7000 kg/cm 2. This direct energy gap is found to increase at a rate of 1.3 ± 0.1 × 10 5 eV cm 2/ kg, in agreement with previou...
Materialband gap typeband gap energybandgap wavelength lead selenide (PbSe) direct 0.27 eV 4.57 μm lead telluride (PbTe) direct 0.32 eV 3.86 μm indium arsenide (InAs) direct 0.36 eV 3.43 μm lead sulfide (PbS) direct 0.37 eV 3.34 μm germanium (Ge) indirect 0.67 eV 1.84 μm gallium ...
compounds, are also of considerable technological interest. References F. Herman, R. L. Kortum, C. D. Kuglin, and R. A. Short, “New Studies of the Band Structure of Silicon, Germanium, and Grey Tin,”Quantum Theory of Atoms, Molecules, and the Solid State, P. P. Löwdin, ed. (...
Germanium (Ge), an alloy-type anode material for lithium-ion batteries (LIBs), possesses many advan-tages such as high theoretical capacity and decent electrical conductivity. Nevertheless, its application is restricted by tremendous volume variation and tardy reaction kinetic during discharge/charge pro...
Here, hollow silicon/germanium (H-SiGe) nanospheres with a binary-active compo-nent and heterogeneous structure combined with porous carbon (pC) reinforcing are synthesized as lithium-ion battery anodes. Experimental studies demonstrate that the H-SiGe/pC anodes possess tiny volume expansion, high ...