Energy band gap and optical properties of non-stoichiometric InN—theory and experiment - ScienceDirectA1. AbsorptionA1. DefectsB1. AlloysB1. NitridesThe influence of antisite defects in InN is analyzed theoretically using a Linear Combination of Atomic Orbitals approach. The procedure used is ...
crystalline silicon, the band-gap energy is 1.1 electron-volts (eV). Other PV cell materials have band-gap energies ranging from 1 to 3.3eV[64,65]. Moreover, in recent studies, researchers are trying to find the optimum use of band gaps in a multi-junction device using several techniques...
Energy band gap ranging between 3.12 eV to 2.47 eV have been obtained for the samples containing the nanoparticles in the range of 2.3 to 6.0 nm size. A correlation between the band gap and size of the nanoparticles is also established. 展开 关键词:...
band gap energy 带隙能 band gap reference 【计】 带隙基准 direct band gap semiconductor 直接跃迁半导体 band gap 带隙,能带隙 energy gap 能带宽度,能隙 energy band 能带,能量带 optical band gap 光禁带 forbidden gap energy 禁带隙能 thermal energy gap 热能隙 forbidden energy gap 【...
2008 ABSTRACT ThebandgapenergyE g insiliconwasfoundbyexploitingthelinearrelationshipbetweenthe temperatureandvoltagefortheconstantcurrentinthetemperaturerangeof275Kto333K. Withintheprecisionofourexperiment,theresultsobtainedareingoodagreementwiththe knownvalueenergygapinsilicon.ThetemperaturedependenceofE g forsilicon...
We present measurements of the two-photon absorption coefficients beta(2) of 10 different semiconductors having band-gap energies between 1.4 and 3.7 eV. We find that beta(2) varies as E(g)(-3), as predicted by theory. In addition, the absolute values of beta(2) agree with theory, whic...
The band-gap energies and effective masses of boron gallium nitride (BGaN) ternaries were estimated. The band-gap energies of BGaN ternaries increase proportionally with the boron composition x. However, the effective masses of electrons and holes in BGaN ternaries are almost equal to those of ...
Density functional theory and the band gap problem How can the fundamental band gap of an insulator be predicted? As a difference of ground-state energies, the fundamental gap seems to fall within the reach... JP Perdew - 《International Journal of Quantum Chemistry》 被引量: 210发表: 1986年...
Physical properties of InN with the band gap energy of 1.1 eV We report the electrical and optical properties of undoped and Mg-doped InN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates. InN has a hex... T.Inushima,V.V.Mamutin,V.A.Vekshin - 《Journal of Crystal...
energy gapgallium compoundsphotoconductivityspin-orbit interactionsternary semiconductorsvalence bandsvapour phase epitaxial growth/ band-gap energyvalence-band splittingThe photoconductive cadmium gallium selenide (CdGa 2 Se 4 ) layer was grown through the hot wall epitaxy method. From the photocurrent (PC...