This indirect to direct band gap transition is attributed to the direct band gap nature of the core region in their bulk counterpart and strain effect on the core/shell interface. The band gap also demonstrates an increase when the size of both CSNWs is reduced from 3 nm to 2.5 nm, as ...
integrating III–V lasers on CMOS-compatible Si platforms has been proved as the most efficient method to resolve the issue of Si’s indirect bandgap property, despite great efforts have been made on group-IV lasers8. Even though high-performance Fabry-Perot and distributed feedback lasers integr...
Estimates of the fundamental (indirect) band gap and band alignments of coherently strained ${mathrm{Si}}_{mathrm{x}}$${mathrm{Ge}}_{1mathrm{ensuremath{-}}mathrm{x}}$ alloys for growth on Ge(001) are given for x in the range 0ensuremath{le}xensuremath{le}1. The present results ...
The energetics and band structures of the elemental semiconductor Si in two fourfold-coordinated clathrate structures have been studied. For the Si(34) and Si(46) structures we predict indirect band gaps near 1.9 eV, or 0.7 eV wider than that of Si in the well-known ${\mathit{sp}}^{3...
直接带隙硅基超晶格_A_Si_m_B_Si_m_A_的设计
Optical strength is evaluated for various types of Si–SixGe1xdirect‐band‐gap superlattices. A method for the evaluation is developed that is compatible with akpmethod for indirect‐band‐gap constituent materials, which is more rigorous than the envelope‐function approach. The optical matrix elem...
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently1, because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To overcome this drawback, several routes have been pursued, such as the all-optical Si Raman laser2and the hete...
PHOTONIC devices are becoming increasingly important in information and communication technologies. But attempts to integrate photonics with silicon-based microelectronics are hampered by the fact that silicon has an indirect band gap, which prevents eff
The optoelectronic applications of Si are restricted to the visible and near-infrared spectral range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance, has been a long-standing scientific challenge for many decades since most photons with sub-band gap en...
Group IV materials grown on silicon such as Ge and GeSn alloy can change from indirect bandgap into direct bandgap by introducing mechanically strain and ... H Shen,DS Li,DR Yang - 《Acta Physica Sinica》 被引量: 3发表: 2015年 Direct Band Gap Germanium for Si-compatible Lasing For several...