Direct and Indirect Band Gap SemiconductorsKnowles, Kevin
Publisher’s noteSpringer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. About this article Cite this article Shin, H., Hong, D., Cho, H.et al.Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on...
Erratum: Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors We calculate the isotope and temperature shifts of the indirect and direct band gaps in natural silicon (M\\\ifmmode\\\bar\\\elseextasciimacron\\\fi{}=... S Zollner,M Cardona,S Gopalan ...
是不是如果是direct band gap，就能激发光子，从而有荧光效应？而indirect band gap则不能？[Last ...
Theoretical Chemistry Accounts: Theory,Computation,and Modeling (Theoretica Chimica Acta)Dong-Kyun Seo, Roald Ho mann,"Direct and indirect band gap types in one- dimensional conjugatedor stacked organic materials", Theor Chem Acc (1999).Seo, D.; Hoffmann, R. Direct and indirect band gap types ...
so it is milliseconds before the silicon can emit light, and by then other interactions with much shorter lifetimes have drained away the energy that could have been emitted as light. Germanium and some other semiconductors such as gallium phosphide also have indirect bandgaps that make them poor...
1 can be described as; bulk recombination via inter-band-gap states (a), light emission through direct exciton recombination (b), recombination via crystal surface states (c), electrons lost in the CB to an electrochemical process (d), and holes lost in the VB to an electrochemical process...
This phenomenon works for both direct and indirect band gap semiconductors e.g. Mn doped GaAs or Se doped Si (see Fig. 6a and b). Sign in to download hi-res image Fig. 6. Schema of the bandgap engineering in direct band gap GaAs (a) and in Si (b) due to impurity band (IB) ...
Both direct and indirect band gap recombinations are observed at room temperature around 1.6 and1.8μm. The amplitude of the direct band gap recombination is equivalent to the one of the indirect band gap.关键词: Germanium Band gap Electroluminescence Photonic bandgap materials Doping ...
direct gap前没有band。而且pyrite是直接带隙半导体...或许差距0.04eV太小了，热激发可以克服，所以...